采用 GaAs工艺设计了一个 12~18 GHz毫米波单片集成电路(MMIC)低噪声放大器 (LNA)。采用三级单电源供电放大结构, 运用最小噪声匹配设计、共轭匹配技术和负反馈结构, 同时满足了噪声系数、增益平坦度和输出功率等要求。仿真表明: 在 12~18 GHz的工作频带内, 噪声系数为 1.15~1.41 dB, 增益为 27.9~29.1 dB, 输出 1 dB压缩点达到 15 dBm, 输入、输出电压驻波比(VSWR)系数小于 1.72。

This paper presents a 12-18 GHz Low Noise Amplifier(LNA) Monolithic Microwave Integrated Circuit(MMIC) in GaAs process, and the design of this LNA layout is verified in ADS EM simulation. This LNA circuit uses single DC power supply. In the design of matching network, the minimum noise matching design, conjugate matching technology and the negative feedback structure are utilized to meet the requirement of low noise, gain flatness and power output. The simulation indicates that in the band of 12-18 GHz, the Noise Figure(NF) of LNA varies from 1.15 dB to 1.41 dB, and power transmission gain is 27.9-29.1 dB, the 1 dB compression power point is 15 dBm, and the Voltage Standing Wave Ratio(VSWR) of input and output is less than 1.72.