铁电材料作为感光功能薄膜的红外器件研究近年来十分活跃, 其良好的压电、铁电、热释电、光电及非线性光学特性以及能够与半导体工艺相集成等特点, 在微电子和光电子技术领域有着广阔的应用前景。实验将铁电材料锆钛酸铅作为感光层与GaN 基高电子迁移率晶体管（HEMT)相结合, 成功地制备出了感光栅极GaN基HEMT器件, 并在波长为365 nm的光照下进行探测, 经大量实验测试后发现器件在该波段的光照下饱和电流达到28 mA, 相比无光照时饱和电流提高12 mA。另外, 通过合理改变器件结构尺寸, 包括器件栅长以及栅漏间距, 发现随着栅长的增大, 器件的饱和输出电流依次减小, 而栅漏间距的变化对阈值电压以及饱和电流的影响并不大。由此可知, 改变器件结构参数可以达到提高器件性能的目的并且可以提高探测效率。

Ferroelectric materials have been very active in recent years as the infrared devices of photosensitive films. Their good piezoelectricity, ferroelectric, pyroelectric, photoelectric and nonlinear optical properties, and the integration of semiconductor technology, have a broad application prospect in the field of microelectronics and optoelectronic technology. The experiment combined the ferroelectric material lead zirconate titanate as the photosensitive layer and the GaN base high electron mobility transistor (HEMT). The photosensitive gate GaN based HEMT device was successfully prepared and detected under the light wavelength of 365 nm. After a large number of experimental tests, the light illumination of the device was found in this band. The saturation current reaches 28 mA, and the saturation current is increased by 12 mA compared with that without illumination. In addition, by reasonably changing the size of the device structure, including the gate length and the gate leakage distance, it is found that the saturation output current decreases in turn with the increase of the gate length, while the effect of the gap between the gate leakage distance on the threshold voltage and the saturation current is not significant. It can be seen that changing the device structure parameters can improve the performance of the device and the detection efficiency.