基于硅基半导体器件的功放模块, 由于器件本身物理结构特性引起的功放开关时间以及开关时上升沿、下降沿斜率的控制不当, 导致调制邻道功率(Modulation of Adjacent Channel Power, ACP)以及瞬态切换邻道功率(Adjacent channel transient power, ACTP)较差, 从而引起邻道干扰。针对硅基半导体器件功放模块在数字对讲机中的应用, 创造性地提出了一种新的方法, 对功放栅极偏置电路优化, 从理论上分析和推导出功放开关时间以及开关时上升沿、下降沿斜率对ACP以及ACTP的影响, 并在实际应用中通过适当调节对讲机功放模块栅极偏置电路电容以及串联电阻, 实现了功放开关的上升沿以及下降沿斜率调节。实验结果表明: 该方法在不影响功放输出功率以及效率的前提下, 当信道间隔为12.5 kHz时, ACP<-60 dBc,ACTP<-50 dBc, 有效改善了ACP、ACTP的性能, 具有一定的实际意义和应用价值。

For power amplifier module based on silicon based semiconductor devices, due to improper control of the amplifier's switching time and the slope of the rising or falling edges of the switch caused by the device physical structure itself, modulation of adjacent channel power(ACP)and adjacent channel transient power(ACTP) are poor, causing adjacent channel interference. Based on the silicon based semiconductor device power amplifier module in the digital two-way radio application, a new method was proposed creatively to optimize the amplifier gate bias circuit. The influence of the switching time of the amplifier and the slope of the rising and falling edges of the switch on ACP and ACTP was analyzed and deducted in theory. In practical application, the rising edge and the downward slope of the power amplifier switch were adjusted by properly adjusting the capacitance of the bias circuit and the series resistance of the power amplifier module of the two-way radio. The experimental results show that this can effectively improve the performance of ACP and ACTP, when the channel spacing is 12.5 kHz, the ACP and ACTP are less than -60 dBc and-50 dBc without affecting the output power and efficiency of the amplifier, it has certain practical significance and application value.