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GaN基蓝光LED单偏振输出及高光提取效率的实现

Realization of single polarization output and high light extraction efficiency of GaN based blue LED

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摘要

为了提高倒装发光二极管(LED)光提取效率的同时实现单偏振光输出, 建立了正装、倒装和集成金属亚波长光栅倒装LED 3种模型, 采用RSOFT软件进行仿真对比及器件优化,并进行了理论分析和模拟验证。结果表明, 倒装LED虽然可以提高光提取效率但对P-GaN层厚非常敏感, 无法单偏振光输出; 集成了金属亚波长光栅的倒装LED可以不受P-GaN层厚影响, 实现单偏振光输出, 但要输出稳定偏振光, 受光栅参量和介质过渡层厚度影响非常显著;优化后的结构可以实现57.63%的光提取效率, 偏振消光比达到25.8dB。该研究对制造高性能蓝光LED具有一定的指导作用。

Abstract

In order to improve light extraction efficiency of a flip-chip light-emitting diode (LED) and realize single polarization light output, three models of normal, flip-chip and integrated metal sub-wavelength grating flip-chip LED were established. RSOFT software was used to simulate and optimize the device, and theoretical analysis and simulation verification were carried out. The results show that, flip-chip LED can improve the light extraction efficiency, but it is very sensitive to the thickness of P-GaN layer and can not output single polarized light. Flip-chip LED integrated with metal sub-wavelength grating can achieve single polarized light output without the influence of P-GaN layer thickness; this kind of LED can output stable polarized light, but it is heavily affected by grating parameters and thickness of transition layer. The thickness of transition layer and parameters are very significant. By optimizing the structure, the extraction efficiency can reach 57.63% and the polarization extinction ratio can reach 25.8dB. The research has some guidance for manufacturing blue ray LED with high performance.

Newport宣传-MKS新实验室计划
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中图分类号:TN312+.8

DOI:10.7510/jgjs.issn.1001-3806.2019.02.007

所属栏目:激光材料与光学元件

基金项目:国家自然科学基金资助项目(61650404); 浙江省教育厅一般科研资助项目(Y201738091); 衢州市科技计划资助项目(2017G16); 新苗人才计划校级资助项目(QZY17X013)

收稿日期:2018-04-04

修改稿日期:2018-04-13

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作者单位    点击查看

江达飞:衢州职业技术学院 信息工程学院, 衢州 324000
江孝伟:衢州职业技术学院 信息工程学院, 衢州 324000北京工业大学 电子信息与控制工程学院 光电子技术实验室, 北京 100124
张丽娜:衢州职业技术学院 信息工程学院, 衢州 324000

联系人作者:江孝伟(JosephJiangquzhi@126.com)

备注:江达飞(1986-), 男, 讲师, 硕士研究生, 主要研究方向为半导体光电子器件。

【1】SEOK M S, YOO S J, CHOE J H, et al. Light extraction efficiency enhancement using surface-structured light-emitting diodes with a subwavelength coating[J]. Journal of the Korean Physical Society, 2016, 68(3):462-466.

【2】LIN Q, LIU Q N. Divergence characteristics of light spot of a circular LED array [J] Laser Technology, 2015, 39(6):858-862(in Chin-ese).

【3】FENG Q, LIANG Q, WANG Y, et al. The design and optimization of lens array for LED backlight in LCD imaging engine of helmet-mounted display[J]. Journal of the Society for Information Display, 2017,25(5): 312-319.

【4】NGUYEN M H, NGUYEN H B, NGUYEN T H, et al. SU-8 lenses: simple methods of fabrication and application in optical interconnection between fiber/LED and microstructures[J]. Journal of Electronic Materials, 2016, 45(5):2529-2535.

【5】KOVALEV V I, RUKOVISHNIKOV A I, ROSSUKANYI N M, et al. LED magneto-optical ellipsometer with the switching of orthogonal polarization states[J]. Instruments & Experimental Techniques, 2016, 59(5):707-711.

【6】WANG F, RAO J H, XIANG X H. Research of performance of circular array light source in underwater wireless LED optical communication[J]. Laser Technology, 2014,38(4):527-532(in Chinese).

【7】GHOSH R, HALDAR A, GHOSH K K, et al. Further enhancement of light extraction efficiency from light emitting diode using triangular surface grating and thin interface layer[J]. Applied Optics, 2015, 54(4):919-926.

【8】BABIKER S G, SID A M O, YONG S, et al. Polarized gan-based light-emitting diode with a silver sub wavelength grating and dielectric layer[J]. Middle East Journal of Scientific Research, 2014, 22(2):193-198.

【9】HU X L, ZHANG J, WANG H, et al. High-luminous efficacy white light-emitting diodes with thin-film flip-chip technology and surface roughening scheme[J]. Journal of Physics, 2016, D49(44):616-623.

【10】WIERER J J, STEIGERWALD D A, KRAMES M R, et al. High-power AlGaInN flip-chip light-emitting diodes[J]. Applied Physics Letters, 2001, 78(22):3379-3381.

【11】CHENG B S, CHIU C H, HUANG K J, et al. Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2-D photonic crystal pattern[J]. Semiconductor Science & Technology, 2008, 23(5):1-5.

【12】HONG E J, BYEON K J, PARK H, et al. Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction[J]. Materials Science & Engineering, 2009, B163(3):170-173.

【13】ZHANG G, WWANG C, CAO B, et al. Polarized GaN-based LED with an integrated multi-layer subwavelength structure[J]. Optics Express, 2010, 18(7):7019-7030.

【14】KHOMITSKY D V. Model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well[J]. Physics, 2009,E3552:3-13.

【15】WANG M, HU J, WANG C. High linearly polarized light emission from GaN-based LED with patterned dielectric/metal structures[J].Proceedings of the SPIE, 2015,9524:952414.

【16】ZHANG L, TENG J, CHUA S J, et al. Design and fabrication of subwavelength nanogratings based light-emitting diodes[J]. Applied Physics, 2011, A103(3):827-830.

【17】LIU H. Study on enhancing the light extraction efficiency of GaN based light-emitting diodes by photonics crystal and one-dimensional grating structure[D]. Wuhan: Huazhong University of Science and Technology, 2014: 57-104(in Chinese).

【18】LI W, YUE Q Y, KONG F M, et al. Influence of surface Zn nano-structures on light emitting efficiency of GaN-based LED[J]. Acta Photonica Sinica, 2013, 42(4):409-416 (in Chinese).

【19】XING H, CAO B, ZHANG G J, et al. Polarization properties of a nano-particle array grating on GaN-based LED[J]. Advanced Materials Research, 2013, 750/752:995-998.

引用该论文

JIANG Dafei,JIANG Xiaowei,ZHANG Lina. Realization of single polarization output and high light extraction efficiency of GaN based blue LED[J]. Laser Technology, 2019, 43(2): 184-188

江达飞,江孝伟,张丽娜. GaN基蓝光LED单偏振输出及高光提取效率的实现[J]. 激光技术, 2019, 43(2): 184-188

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