半导体激光器(LD)的工作波长是随温度变化的, 对LD进行温控是扩展全固态激光器(DPSSL)正常工作温度范围的常用方法, 但常用的控温方法在-50 ~70 ℃的宽温区范围存在体积大、能耗高、效率低等问题。通过实验测试得到GaAs量子阱激光器的波长温度漂移系数为0.25 nm/℃, 分析了Nd:YAG晶体吸收谱的多峰特性。提出采用高温时工作波长为808 nm的GaAs 量子阱激光器作为泵浦源, 利用Nd:YAG晶体的795.7 nm和808 nm的两个吸收峰, 通过分段加热控温降低温控功耗的方案。实验结果显示: 全固态激光器在两个吸收峰处得到的输出脉冲特性基本相同, 在温度较低时, 分段控温的加热功率减小了4.7 W, 接近不分段最大加热功率的一半。

The operating wavelength of a semiconductor laser(LD) varies with temperature. Temperature control of a LD was a common method of extending the normal operating temperature range of an all-solid-state laser(DPSSL). However, commonly used methods have large volume, high energy consumption and low efficiency in the wide temperature range of -50 ℃ to 70 ℃. The wavelength drift coefficient of the GaAs quantum well laser is 0.25 nm/℃, and the multi-peak characteristic of the absorption spectrum of Nd:YAG crystal was analyzed. A GaAs quantum well laser with a working wavelength of 808 nm at high temperature was used as the pump source. The two absorption peaks of 795.7 nm and 808 nm of Nd:YAG crystal were used to reduce the temperature control power consumption by segment heating. The experimental results show that the output pulse characteristics of the DPSSL at the two absorption peaks are basically the same. At lower temperature, the heating power of the segmented temperature control is reduced by 4.7 W, which is close to half of the maximum heating power without segmentation.