红外, 2019, 40 (4): 18, 网络出版: 2019-07-23
4 in InSb晶片加工技术研究
Research of 4 in InSb Wafer Processing Technology
总厚度偏差 翘曲度 表面粗糙度 表面宏观质量 研磨 抛光 InSb InSb 4 in 4 in total thickness deviation warp surface roughness surface macro-quality grinding polishing
摘要
在红外探测领域,InSb材料已经大规模地被用于制造3~5 m波长范围的焦平面阵列探测器。对更大规模、更高性能探测器的需求日益增长,而该类探测器需要在更大尺寸、更高质量的晶片上制备。所以,对4 in InSb晶片加工技术进行了研究。通过优化研磨、抛光工艺参数,最终获得总厚度偏差小于等于10 m、翘曲度小于等于20 m、表面粗糙度小于1 nm、表面质量优的4 in InSb晶片,提高了加工效率,能够满足大规模高质量红外焦平面探测器的使用需求。
Abstract
In the field of infrared detection, InSb materials have been widely used to fabricate focal plane array detectors in the wavelength range from 3 to 5 microns. There is a growing demand for larger, higher performance detectors that need to be fabricated on larger, higher quality wafers.Therefore, the processing technology of 4-inch InSb wafers is studied. By optimizing the grinding and polishing parameters, 4-inch InSb wafers with a total thickness deviation of 10 m or less, a warpage of 20 m or less, a surface roughness of less than 1 nm, and excellent surface quality were obtained, which improves processing efficiency and can satisfy the need to use large-scale high-quality infrared focal plane detectors.
赵超, 徐鹏艳, 孔忠弟, 彭志强, 王小龙, 庞新义. 4 in InSb晶片加工技术研究[J]. 红外, 2019, 40(4): 18. ZHAO Chao, XU Peng-yan, KONG Zhong-di, PENG Zhi-qiang, WANG Xiao-long, PANG Xin-yi. Research of 4 in InSb Wafer Processing Technology[J]. INFRARED, 2019, 40(4): 18.