空穴注入层 (HIL)在量子点发光二极管 (QLEDs)中有重要作用。使用低温溶液法制作了 MoOx纳米颗粒，将其在氧化铟锡( ITO)玻璃上旋涂成膜后使用不同温度进行退火处理，并作为空穴注入层进行量子点发光二极管的制作。实验结果表明，氧化钼薄膜有着与 ITO玻璃阳极和 Poly-TPD空穴传输层匹配的能级，可用作量子点发光二极管的空穴注入层，而使用经 100 ℃退火处理后的 MoOx薄膜作为空穴注入层的器件性能最佳：器件启亮电压为 2.5 V，最高外量子效率为 11.6%，在偏压为10 V时，器件的最高亮度达到 27 100 cd/m2。

Hole Injection Layer(HIL) plays a key role in Quantum dot-based Light Emitting Diodes (QLEDs). Herein, MoOx nanoparticles are prepared with a solution method under low temperature, next they are coated on the surface of Indium Tin Oxide(ITO) substrate by means of spin casting with following anneal under different temperatures, and then used as HILs to fabricate QLEDs. The experimental results show that the energy level of MoOx film is matched to those of the ITO and Poly-TPD, and MoOx is suitable to be used as HIL for QLEDs. By analyzing the performance of all the fabricated devices, it can be concluded that the QLEDs, corresponding to the MoOx film annealed under 100 ℃, exhibits the best turn-on voltage, External Quantum Efficiency(EQE) and brightness. In detail, this device has a low turn-on voltage of 2.5 V, a high EQE of 11.6%, and the highest brightness of 27 100 cd/m2 at 10 V.