光电工程, 2019, 46 (5): 180444, 网络出版: 2019-07-25   

TFT光刻平面补偿优化

The improvement of TFT lithography plane compensation
作者单位
合肥京东方光电科技有限公司,安徽合肥 230012
摘要
TFT线宽或线间距接近光刻机分辨率时,光刻图形容易产生光刻胶残留不良,为改善该问题,本文从光刻图形出发,以最佳光刻图形所在位置为基准,计算出光刻机光刻平面的优化补偿量,从而实现对光刻平面的补偿优化。首先,通过光刻机光刻平面的补偿量、基板载台平坦度及焦平面计算出光刻时光刻区域基板表面的高度值。然后,根据光刻区域内光刻图形状况找到最佳光刻区域位置,并以该位置为零点,计算出整个光刻区域相对于该位置的相对高度差值。其次,对光刻区域内的高度差值做平面拟合,计算出当拟合平面为垂直于 Z轴的水平面时所需要的补偿量,该补偿量即为光刻区域内光刻平面的优化补偿量。最后,以该补偿量对光刻平面进行补偿,从而使得光刻区域内光刻平面均趋于同一最佳光刻面。结果表明:光刻平面优化补偿后,光刻区域内光刻图形均能形成清晰的图形,光刻胶残留不良得到改善,同时光刻 DICD均值在目标值范围内减小了 1.38%,DICD均一性提高了 20%。
Abstract
When the line width or line space of thin film transistor (TFT) is close to the resolution of the lithography machine, it is easy to appear the defect of photoresist remain in lithography pattern. In order to improve this problem, based on the position of the best lithography pattern, the optimal compensation amount of lithography plane of the lithography machine is calculated, so lithography plane is improved. Firstly, by the compensation of the lithography plane, the flatness of the plate stage and the focal plane, the value of the plate surface height is calculated in the li-thography region. Then, according to the lithography pattern in the lithography region, the optimum position of the lithography region is found, and take this location as the zero point, the relative height difference between the total lithography region and the optimum position is calculated. Secondly, the fitting plane of the height difference in the lithography region is done, and the compensation is calculated when the fitting plane is the horizontal plane that is perpendicular to the Z axis, which is the optimal compensation of the lithography plane in the lithography region. Finally, the compensation is used to compensate the lithography plane, so that the lithography plane in the litho-graphy region tends to the same optimal lithography plane. The results show that the lithography pattern can be clearly formed in the lithography region after the lithography plane is offset, the defect of the photoresist remain is improved, at the same time, the average value of the develop inspection critical dimension (DICD) is reduced by 1.38% in the target value range, and the uniformity of the DICD is increased by 20%.

张玉虎, 徐海涛, 李亚文, 罗传文, 曹少波, 李力. TFT光刻平面补偿优化[J]. 光电工程, 2019, 46(5): 180444. Zhang Yuhu, Xu Haitao, Li Yawen, Luo Chuanwen, Cao Shaobo, Li Li. The improvement of TFT lithography plane compensation[J]. Opto-Electronic Engineering, 2019, 46(5): 180444.

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