发光学报, 2019, 40 (7): 865, 网络出版: 2019-07-31   

Ni插入层对Ag/p-GaN界面接触性能的影响机理

Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance
作者单位
1 南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330096
2 南昌黄绿照明有限公司, 江西 南昌 330096
摘要
采用“牺牲Ni处理”的方法研究了Ni对Ag/p-GaN界面接触性能的影响机理。利用传输线法(TLM)、紫外分光光度计、X射线光电子能谱(XPS)以及二次离子质谱仪(SIMS)等表征方式对Ag/p-GaN界面层光电性能进行了研究。结果表明, 牺牲Ni处理后p-GaN表面仍会残留少量的Ni并以Ni2O3的形式存在; p-GaN表面Ga 2p3结合能峰位朝低能方向移动了0.3 eV, 提高了Ag/p-GaN间的欧姆接触性能。我们认为,界面处的Ni会优先和p-GaN表面Ga2O3氧化物中的O结合形成Ni2O3, 进而降低了p-GaN表面费米能级, 提高了Ag/p-GaN之间的欧姆接触性能。
Abstract
The effect of Ni on the contact performance of Ag/p-GaN interface is studied by the method of ‘Ni-assisted treatment’. The photoelectric properties of Ag/p-GaN interfacial are investigated by means of transmission line method(TLM), UV spectrophotometer(UV), X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometer(SIMS). The results show that a small amount of Ni remains on the surface of p-GaN after Ni-assisted treatment and exists in the form of Ni2O3. The binding energy peak of Ga 2p3 on the p-GaN surface shifts 0.3 eV in the direction of low energy, which improves the Ohmic contact performance between Ag/p-GaN after Ni-assisted treatment. In our opinion, the Ni at the interface will preferentially combine with the O of Ga2O3 on the surface of p-GaN to form Ni2O3, thus reducing the Fermi level on the surface of p-GaN and improving the Ohmic contact performance between Ag/p-GaN.

徐帅, 王光绪, 吴小明, 郭醒, 刘军林, 江风益. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019, 40(7): 865. XU Shuai, WANG Guang-xu, WU Xiao-ming, GUO Xing, LIU Jun-lin, JIANG Feng-yi. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019, 40(7): 865.

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