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InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱

Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers

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摘要

利用MOCVD在Al2O3(0001)衬底上制备InGaN/GaN MQW结构蓝光LED外延片。以400 mW中心波长405 nm半导体激光器作为激发光源, 采用自主搭建的100~330 K低温PL谱测量装置, 以及350~610 K高温PL测量装置, 测量不同温度下PL谱。通过Gaussian分峰拟合研究了InGaN/GaN MQW主发光峰、声子伴线峰、n-GaN黄带峰峰值能量、相对强度、FWHM在100~610 K范围的温度依赖性。研究结果表明:在100~330 K温度范围内, 外延片主发光峰及其声子伴线峰值能量与FWHM温度依赖性, 分别呈现S与W形变化; 载流子的完全热化分布温度约为150 K, 局域载流子从非热化到热化分布的转变温度为170~190 K; 350~610 K高温范围内, InGaN/GaN MQW主发光峰峰值能量随温度变化满足Varshni经验公式, 可在MOCVD外延生长掺In过程中, 通过特意降温在线测PL谱, 实时推算掺In量, 在线监测外延片生长。以上结果可为外延片的PL发光机理研究、高温在线PL谱测量设备开发、掺In量的实时监测等提供参考。

Abstract

A blue light LED epitaxial wafer with InGaN/GaN MQW structure was prepared on an Al2O3 (0001) substrate by MOCVD. The 400 mW semiconductor laser with a center wavelength of 405 nm was used as the excitation light source. The PL-spectrum at different temperatures was measured by the self-built 100-330 K low-temperature PL spectrum measurement device and the 350-610 K high-temperature PL measurement device. The peak energy and the relative intensity of InGaN/GaN MQW main luminescence peak, the phonon concomitant peak and the n-GaN yellow band peak, as well as the temperature dependence of the FWHM in the range of 100-610 K were studied by Gaussian peak differentiating and imitating. The results showed that in the temperature range of 100-330 K, the peak energy of the main luminescence peak and the phonon concomitant peak of the epitaxial wafer, as well as the temperature dependence of the FWHM displayed S and W-shaped changes respectively; the complete heating distribution temperature of the carrier was about 150 K; the transition temperature of local carriers from non-heating to heating distribution was 170-190 K; in the high temperature ranged 350-610 K, the changes in peak energy of InGaN/GaN MQW with temperature variation satisfied the Varshni empirical formula. In the In-doped process of MOCVD epitaxial growth, the PL spectrum could be measured by deliberately cooling the temperature; the amount of In-doped was calculated in real time; and the epitaxial wafer growth was monitored online. The above results can be used for the study of PL luminescence mechanism of epitaxial wafers, development of high-temperature online PL spectrum measurement equipment, real-time monitoring of In-doped and so on.

Newport宣传-MKS新实验室计划
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中图分类号:O433.4;TN312+.8

DOI:10.3788/fgxb20194007.0891

所属栏目:器件制备及器件物理

基金项目:国家重点研发计划(2017YFB0403700); 国家自然科学基金(61864008); 安徽省自然科学面上基金(1808085MF205); 陕西省自然科学基础研究计划(2017JQ6011)资助项目

收稿日期:2018-07-25

修改稿日期:2018-10-17

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杨超普:商洛学院 化学工程与现代材料学院, 陕西 商洛 726000南昌大学 材料科学与工程学院, 江西 南昌 330031
方文卿:南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330047
毛清华:安徽工业大学 数理科学与工程学院, 安徽 马鞍山 243032
杨 岚:商洛学院 化学工程与现代材料学院, 陕西 商洛 726000
刘彦峰:商洛学院 化学工程与现代材料学院, 陕西 商洛 726000
李 春:商洛学院 化学工程与现代材料学院, 陕西 商洛 726000
阳 帆:南昌大学 材料科学与工程学院, 江西 南昌 330031南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330047

联系人作者:杨超普(ycpslu@163.com)

备注:杨超普(1987-), 男, 陕西商洛人, 博士研究生, 讲师, 2014年于南昌大学获得硕士学位, 主要从事光电子材料与器件的研究。

【1】刘诗涛,王立,伍菲菲,等. InGaN/GaN多量子阱LED载流子泄漏与温度关系研究 [J]. 发光学报, 2017,38(1):63-69.
LIU S T,WANG L,WU F F,et al.. Temperature-dependent carrier leakage in InGaN/GaN multiple quantum wells light-emitting diodes [J]. Chin. J. Lumin., 2017,38(1):63-69. (in Chinese)

【2】HATTORI A N,HATTORI K,MORIWAKI Y,et al.. Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments [J]. Jpn. J. Appl. Phys., 2014,53(2):021001-1-5.

【3】杨超普. MOCVD在线光致发光与红外测温研究 [D]. 南昌:南昌大学, 2014.
YANG C P. Research on MOCVD in situ Photoluminescence and On-line Infrared Thermometry [D]. Nanchang:Nanchang University, 2014. (in Chinese)

【4】张凯. InGaN/GaN多量子阱发光特性的研究 [D]. 济南:山东大学, 2015.
ZHANG K. Optical Investigation on InGaN/GaN Multiple Quantum Wells [D]. Jinan:Shandong University, 2015. (in Chinese)

【5】LIU S T,QUAN Z J,WANG L. Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells [J]. Chin. Phys. B, 2017,26(3):038104-1-6.

【6】YANG C P,FANG W Q,MAO Q H,et al.. Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD [J]. Optoelectron. Adv. Mater.—Rapid Commun., 2015,9(11-12):1575-1578.

【7】王雪蓉,魏莉萍,郑会保,等. 利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量 [J]. 激光与光电子学进展, 2012,49(5):051601-1-5.
WANG X R,WEI L P,ZHENG H B,et al.. Al contents of AlxGa1-xN epitaxial films studied by photoluminescence technique [J]. Laser Optoelectron. Prog., 2012,49(5):051601-1-5. (in Chinese)

【8】魏国华,王斌,李俊梅,等. In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制 [J]. 发光学报, 2010,31(5):619-623.
WEI G H,WANG B,LI J M,et al.. Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well [J]. Chin. J. Lumin., 2010,31(5):619-623. (in Chinese)

【9】邢兵,曹文彧,杜为民. 不同In含量InGaN/GaN量子阱材料的变温PL谱 [J]. 发光学报, 2010,31(6):864-869.
XING B,CAO W Y,DU W M. Temperature-dependent PL of InGaN/GaN multiple quantum wells with variable content of In [J]. Chin. J. Lumin., 2010,31(6):864-869. (in Chinese)

【10】LIN T,QIU Z R,YANG J R,et al.. Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells [J]. Mater. Lett., 2016,173:170-173.

【11】王绘凝. InGaN/GaN多量子阱的结构及其光学特性的研究 [D]. 济南:山东大学, 2014.
WANG H N. Structure and Optical Investigation on InGaN/GaN Multiple Quantum Wells [D]. Jinan:Shandong University, 2014. (in Chinese)

【12】竹有章,傅关新,王红霞,等. HVPE生长GaN厚膜光致发光特性研究 [J]. 激光与光电子学进展, 2011,48(9):093101-1-5.
ZHU Y Z,FU G X,WANG H X,et al.. Luminescence of GaN thick film grown by HVPE [J]. Laser Optoelectron. Prog., 2011,48(9):093101-1-5. (in Chinese)

【13】WANG Q,ZHU C R,ZHOU Y F,et al.. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs [J]. Superlattices Microstruct., 2015,88:323-329.

【14】PRALL C,RUEBESAM M,WEBER C,et al.. Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE [J]. J. Cryst. Growth, 2014,397:24-28.

引用该论文

YANG Chao-pu,FANG Wen-qing,MAO Qing-hua,YANG Lan,LIU Yan-feng,LI Chun,YANG Fan. Temperature-dependent Photoluminescence Spectra of InGaN/GaN Multiple Quantum Wells Blue LED Wafers[J]. Chinese Journal of Luminescence, 2019, 40(7): 891-897

杨超普,方文卿,毛清华,杨 岚,刘彦峰,李 春,阳 帆. InGaN/GaN多量子阱蓝光LED外延片的变温光致发光谱[J]. 发光学报, 2019, 40(7): 891-897

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