首页 > 论文 > 发光学报 > 40卷 > 7期(pp:915-921)

界面处理对AlGaN/GaN MIS-HEMTs器件动态特性的影响

Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

研究不同界面处理对AlGaN/GaN 金属-绝缘层-半导体(MIS)结构的高电子迁移率晶体管(HEMT)器件性能的影响。采用N2和NH3等离子体对器件界面预处理, 实验结果表明,N2等离子体预处理能够减小器件的电流崩塌, 通过对N2等离子体预处理的时间优化, 发现预处理时间10 min能够较好地提高器件的动态特性, 30 min时动态性能下降。进一步引入AlN作为栅介质插入层并经过高温热退火后能够有效提高器件的动态性能, 将器件的阈值回滞从411 mV减小至111 mV, 动态测试表明, 在900 V关态应力下, 器件的电流崩塌因子从42.04减小至4.76。

Abstract

The effects of different kinds of interface treatment on the characteristic of AlGaN/GaN MIS-HEMTs were studied in this paper. N2 and NH3 plasma pretreatment were used to improve the interface quality. The results show that N2 plasma pretreatment could reduce the current collapse of devices. By optimizing the time of N2 plasma pretreatment, it was found that the dynamic characteristic of devices with 10 min the pretreatment was improved, while that of 30 min was degraded. As a gate dielectric intercalation layer, the annealed AlN interlayer can effectively improve the dynamic characteristic of the device. The Vth hysteresis was decreased from 411 mV to 111 mV, and the device current collapse factor was reduced from 42.04 to 4.76 after under OFF-state VD stress of 900.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:TN386.2

DOI:10.3788/fgxb20194007.0915

所属栏目:器件制备及器件物理

基金项目:国家自然科学基金(61204011,11204009,61574011); 北京市自然科学基金(4142005,4182014); 北京市教委科学研究基金(PXM 2018_014204_500020)资助项目

收稿日期:2018-08-20

修改稿日期:2018-10-17

网络出版日期:--

作者单位    点击查看

韩 军:北京工业大学信息学部 光电子技术省部共建教育部重点实验室, 北京 100124
赵佳豪:北京工业大学信息学部 光电子技术省部共建教育部重点实验室, 北京 100124
赵 杰:北京工业大学信息学部 光电子技术省部共建教育部重点实验室, 北京 100124中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
邢艳辉:北京工业大学信息学部 光电子技术省部共建教育部重点实验室, 北京 100124
曹 旭:北京工业大学信息学部 光电子技术省部共建教育部重点实验室, 北京 100124
付 凯:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
宋 亮:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
邓旭光:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
张宝顺:中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123

联系人作者:韩军(hanjun@bjut.edu.cn)

备注:韩军(1964-), 男, 北京人, 博士, 副教授, 2008年于北京工业大学获得博士学位, 主要从事半导体材料与器件方面的研究。

【1】ZHANG Z L,YU G H,ZHANG X D,et al.. Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer [J]. IEEE Trans. Electron Dev., 2016,63(2):731-738.

【2】LIU S C,CHEN B Y,LIN Y C,et al.. GaN MIS-HEMTs with nitrogen passivation for power device applications [J]. IEEE Electron Dev. Lett., 2014,35(10):1001-1003.

【3】KELEKI ,TA瘙塁LI P T,YU H B,et al.. Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD [J]. Phys. Status Solidi, 2012,209(3):434-438.

【4】王凯,邢艳辉,韩军,等. 掺Fe高阻GaN缓冲层特性及其对AlGaN/GaN高电子迁移率晶体管器件的影响研究 [J]. 物理学报, 2016,65(1):016802-1-6.
WANG K,XING Y H,HAN J,et al.. Growths of Fe-dop ed GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices [J]. Acta Phys. Sinica, 2016,65(1):016802-1-6. (in Chinese)

【5】ELLER B S,YANG J L,NEMANICH R J. Electronic surface and dielectric interface states on GaN and AlGaN [J]. J. Vac. Sci. Technol. A, 2013,31(5):050807-1-29.

【6】XIONG C,LIU S H,LI Y H,et al.. Hot carrier effect on the bipolar transistors’ response to electromagnetic interference [J]. Microelectr. Reliabil., 2015,55(3-4):514-519.

【7】ZHANG Z L,FU K,DENG X G,et al.. Normally off AlGaN/GaN MIS-high-electron mobility transistors fabricated by using low pressure chemical vapor deposition Si3N4 gate dielectric and standard fluorine ion implantation [J]. IEEE Electron Dev. Lett., 2015,36(11):1128-1131.

【8】PENG M Z,ZHENG Y K,WEI K,et al.. Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs [J]. Microelectr. Eng., 2010,87(12):2638-2641.

【9】VANKO G,LALINSKY' T,HACˇK S,et al.. Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT [J]. Vacuum, 2009,84(1):235-237.

【10】MEYER D J,FLEMISH J R,REDWING J M. SF6/O2 plasma effects on silicon nitride passivation of AlGaN/GaN high electron mobility transistors [J]. Appl. Phys. Lett., 2006,89(22):223523-1-3.

【11】WATANABE T,TERAMOTO A,NAKAO Y,et al.. Low-interface-trap-density and high-breakdown-electric-field SiN Films on GaN formed by plasma pretreatment using microwave-excited plasma-enhanced chemical vapor deposition [J]. IEEE Trans. Electron Dev., 2013,60(6):1916-1922.

【12】KIM J H,CHOI H G,HA M W,et al.. Effects of nitride-based plasma pretreatment prior to SiNx Passivation in AlGaN/GaN high-electron-mobility transistors on silicon substrates [J]. Jpn. J. Appl. Phys., 2010,49(4S):04DF05.

【13】HUANG S,JIANG Q M,YANG S,et al.. Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film [J]. IEEE Electron Dev. Lett., 2012,33(4):516-518.

【14】EDWARDS A P,MITTEREDER J A,BINARI S C,et al.. Improved reliability of AlGaN-GaN HEMTs using an NH3/plasma treatment prior to SiN passivation [J]. IEEE Electron Dev. Lett., 2005,26(4):225-227.

【15】HASHIZUME T,OOTOMO S,OYAMA S,et al.. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures [J]. J. Vac. Sci. Technol., 2001,19(4):1675-1681.

【16】ROMERO M F,JIMNEZJIMENEZ A,MIGUEL-SNCHEZMIGUEL-SANCHEZ J,et al.. Effects of N2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT [J]. IEEE Electron Dev. Lett., 2008,29(3):209-211.

【17】HASHIZUME T,OOTOMO S,INAGAKI T,et al.. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors [J]. J. Vac. Sci. Technol. B, 2003,21(4):1828-1838.

【18】REINER M,LAGGER P,PRECHTL G,et al.. Modification of “native” surface donor states in AlGaN/GaN MIS-HEMTs by fluorination:perspective for defect engineering [C]. Proceedings of IEEE International Electron Devices Meeting,Washington,DC,USA, 2015:35.5.1-35.5.4.

【19】ACURIO E,CRUPI F,MAGNONE P,et al.. Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs [J]. Microelectr. Eng., 2017,178:42-47.

【20】HUANG S,JIANG Q M,YANG S,et al.. Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs:compensation of interface traps by polarization charges [J]. IEEE Electron Dev. Lett., 2013,34(2):193-195.

引用该论文

HAN Jun,ZHAO Jia-hao,ZHAO Jie,XING Yan-hui,CAO Xu,FU Kai,SONG Liang,DENG Xu-guang,ZHANG Bao-shun. Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs[J]. Chinese Journal of Luminescence, 2019, 40(7): 915-921

韩 军,赵佳豪,赵 杰,邢艳辉,曹 旭,付 凯,宋 亮,邓旭光,张宝顺. 界面处理对AlGaN/GaN MIS-HEMTs器件动态特性的影响[J]. 发光学报, 2019, 40(7): 915-921

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF