采用直流反应磁控溅射法, 在玻璃衬底上生长了沿(002)择优取向的AlN薄膜, 用Ｘ射线衍射仪(XRD)和扫描电子显微镜(SEM)对AlN薄膜结构和表面形貌进行表征, 并测量了AlN薄膜在405 nm激光激发下的光致发光(PL)光谱。结果表明, 在不同氮气含量条件下生长的AlN薄膜均呈(002)择优取向, 薄膜表面呈小颗粒密堆积排列, 颗粒尺寸在20 nm左右。不同氮气含量条件下生长的AlN薄膜在550 nm处均有较强的由于VAl能级向价带跃迁引起的缺陷能级发光峰; AlN薄膜在589, 614, 654 nm处也有较弱的缺陷能级发光峰, 随着氮气含量增大, 缺陷能级发光峰越来越明显, 产生原因分别为ON-ON缺陷对向VAl-2ON产生的复合缺陷能级的跃迁、导带向与氧有关的杂质能级(IO)间的跃迁以及VAl-ON深能级向价带的跃迁。

The AlN thin films with (002) preferred orientation was deposited on the glass substrate by DC magnetron reactive sputtering method under different nitrogen concentration. The structure and surface pattern of AlN films were characterized by X-ray diffraction(XRD) and scanning electron microscope(SEM). The luminescence properties of AlN thin films were also investigated by photoluminescence(PL) spectra. The results show that the AlN thin films deposited under different nitrogen concentration all present (002) preferred orientation with uniformly dense surface and the average size of the grains is about 20 nm. The PL spectra shows that the AlN thin films deposited under different nitrogen all have a strong emission at 550 nm originating from the defect of VAl transiting to the VB. There are several weak defect emissions at 589, 614, 654 nm. These defect emissions become more obvious with the N2 concentration increasing. The weak emissions at 589, 614, 654 nm can be ascribed to transition from ON-ON to VAl-2ON, from CB to oxygen impurities(IO) and from VAl-ON to VB respectively.