半导体光电, 2019, 40 (4): 513, 网络出版: 2019-09-20  

SiO2/Si上石墨烯薄膜的化学气相沉积法制备及其性能表征

Synthesis and Characterization of Graphene Films by Chemical Vapor Deposition on SiO2/Si
刘喜锋 1,2张鹏博 1,2,3方小红 1,*陈小源 1,2,3
作者单位
1 中国科学院上海高等研究院 薄膜光电工程技术研究中心, 上海 201210
2 中国科学院大学, 北京 100049
3 上海科技大学 物质科学与技术学院, 上海 201210
摘要
以铜为催化剂, 采用聚甲基丙烯酸甲酯(PMMA)和甲烷为碳源的化学气相沉积两步法, 在SiO2/Si衬底上制备了石墨烯薄膜。利用拉曼光谱分析了薄膜的层数和质量, 利用光学显微镜(OM)和扫描电子显微镜(SEM)分析了薄膜的尺寸与表面形貌。实验探究了生长时间、氢气流量和气体总压强等工艺参数对石墨烯薄膜层数和质量的影响, 最终在优化条件下制得10μm级质量较高的多层石墨烯薄膜。
Abstract
Utilizing copper as the catalyst, graphene films were synthesized on SiO2/Si substrate with two-step chemical vapor deposition method by using PMMA and methane as the carbon source. The layer number and mass of the films were analyzed by Raman spectroscopy, and the size and surface morphology were analyzed by optical microscope and scanning electron microscope. The influence of growth time, hydrogen flow and total pressure on the number of layers and quality of graphene films was analyzed. Finally, high-quality and multilayer graphene films with the size of 10μm in diameter were synthesized under optimal conditions.

刘喜锋, 张鹏博, 方小红, 陈小源. SiO2/Si上石墨烯薄膜的化学气相沉积法制备及其性能表征[J]. 半导体光电, 2019, 40(4): 513. LIU Xifeng, ZHANG Pengbo, FANG Xiaohong, CHEN Xiaoyuan. Synthesis and Characterization of Graphene Films by Chemical Vapor Deposition on SiO2/Si[J]. Semiconductor Optoelectronics, 2019, 40(4): 513.

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