半导体光电, 2019, 40 (4): 523, 网络出版: 2019-09-20
硒化温度对SnSe2薄膜材料性能的影响
Effects of Selenization Temperature on Properties of SnSe2 Thin Film
摘要
采用射频磁控溅射加硒化的两步法在超白玻璃衬底上生长SnSe2薄膜, 采用XRD、光学透过谱、Raman光谱、XPS和SEM等方法对薄膜进行性能表征。通过设置不同的硒化温度, 研究不同硒化温度对所得薄膜相结构、物相与组分、表面形貌等性能的影响。结果表明: 350℃, 40min硒化所得薄膜为片状晶粒, 光学带隙为1.46eV, 相结构和均匀性等性能在该硒化条件下均为最佳。
Abstract
The two-step process of RF magnetron sputtering and selenization was used to grow SnSe2 thin films on glass substrate, and the thin films were characterized by XRD, optical transmittance, Raman spectrum, XPS and SEM. By setting different selenization temperatures, their effects on the properties of the thin films such as phase structure, element composition and surface morphology were studied. The results show that the thin films consist of flaky grains with an optical band gap of 1.46eV under the selenization condition of 350℃ for 40min, meanwhile the films present optimal phase structure and uniform property.
孙铖, 沈鸿烈, 高凯, 林宇星, 陶海军. 硒化温度对SnSe2薄膜材料性能的影响[J]. 半导体光电, 2019, 40(4): 523. SUN Cheng, SHEN Honglie, GAO Kai, LIN Yuxing, TAO Haijun. Effects of Selenization Temperature on Properties of SnSe2 Thin Film[J]. Semiconductor Optoelectronics, 2019, 40(4): 523.