红外与毫米波学报, 2019, 38 (4): 04403, 网络出版: 2019-10-14  

高边缘击穿和扩展光谱的圆形单光子雪崩二极管

Circular single-photon avalanche diode with high premature edge breakdown and extended spectrum
作者单位
1 湘潭大学 物理与光电工程学院,湖南 湘潭 411105
2 湖南师范大学 物理与电子科学学院,湖南 长沙 410081
3 上海大学 机电工程与自动化学院,上海 200444
摘要
介绍了一种0.18 μm互补金属氧化物半导体(CMOS)技术的新型宽光谱荧光相关谱探测器,其为高边缘击穿、扩展光谱和低暗计数率的圆形单光子雪崩二极管(SPAD).该器件由p+/deep n-well结,p-well保护环和多晶硅保护环组成.通过Silvaco TCAD 3D器件仿真,直径为10 μm的圆形p+/deep n-well SPAD器件具有较高边缘击穿特性.此外,p+/deep n-well结SPAD比p+/n-well结SPAD具有更长的波长响应和扩展光谱响应范围.该器件在0.5 V过量偏压下,可在490~775 nm波长范围内实现超过40%的光子探测率.该圆形p+/deep n-well SPAD器件在25℃时具有较好雪崩击穿为15.14 V,具有较低暗计数率为638 Hz.
Abstract
This paper presents a 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology high premature edge breakdown, extended spectrum and low dark count rate circular single-photon avalanche diode (SPAD) which together form a novel wide spectrum fluorescence correlation spectroscopy (FCS) detector. The circular device consists of a p+/deep n-well junction, a p-well guard-ring, and a poly guard-ring. Simulations on a Silvaco TCAD 3D device also show that the 10 μm-diameter circular p+/deep n-well SPAD device has high premature edge breakdown characteristics. Moreover,compared to the SPAD p+/n-well junction, the p+/deep n-well junction has a longer wavelength response and spectral expansion. The device achieves wide spectral sensitivity enabling greater than 40% photon detection probability from 490 to 775 nm wavelength at 0.5 V excess bias. The circular p+/deep n-well SPAD has fine avalanche breakdown (15.14 V) and a low dark count rate of 638 Hz at 25℃.

金湘亮, 曾朵朵, 彭亚男, 杨红娇, 蒲华燕, 彭艳, 罗均. 高边缘击穿和扩展光谱的圆形单光子雪崩二极管[J]. 红外与毫米波学报, 2019, 38(4): 04403. JIN Xiang-Liang, ZENG Duo-Duo, PENG Ya-Nan, YANG Hong-Jiao, PU Hua-Yan, PENG Yan, LUO Jun. Circular single-photon avalanche diode with high premature edge breakdown and extended spectrum[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 04403.

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