为了系统地研究Br的引入对CuBrxI1-x薄膜发光强度和衰减时间的影响，通过气相沉积法在Si片上制备了CuBrxI1-x(0≤x≤1)闪烁薄膜，并测试了薄膜的发光性能和衰减曲线。结果表明，所制备的样品具有良好的CuBrxI1-x(0≤x≤1)固溶体结晶性；相对于长波段的深能级发射，CuBrxI1-x薄膜均表现出较强的光致和X射线激发近带边发射，且发射强度随Br含量的增加而大幅增加，有利于提高闪烁器件的探测效率；不过薄膜的发光衰减时间会随Br含量的增加而变慢(40～300 ps)。本研究工作对于通过选择合适组分的CuBrxI1-x闪烁材料以平衡探测效率和时间响应的测量需求具有重要意义。

In order to systematically study the effects of Br on the luminescence intensity and decay time of CuBrxI1-x films， CuBrxI1-x (0≤x≤1) films were prepared on Si wafers by vapor deposition. The luminescence properties and decay curves are measured. The results show that the prepared samples have good crystallinity of CuBrxI1-x (0 ≤x≤1) solid solution. Compared with the deep-level emission located in the long wavelength band, CuBrxI1-x films show strong near-band edge emission stimulated by ultraviolet light and X-ray. The emission intensity increases rapidly with the increase of Br content, which is beneficial to improve the detection efficiency of the scintillation device. However, the decay time of the sample will slow down with the increase of Br content (40-300 ps). This research is of great significance to the selection of suitable composition of CuBrxI1-x scintillation materials in order to balance the requirements between detection efficiency and time response in actual scintillation detection.