在太赫兹技术的应用中,控制太赫兹波的传输非常重要,太赫兹调制器被认为是下一代太赫兹无线通信中的重要器件。成功的研究了一种硅上生长单层二硫化钨的新型光泵浦太赫兹调制器,由于在硅衬底和二硫化钨的交界处出会形成异质结,二硫化钨充当着催化剂的作用,在光泵浦的作用下,在异质结处催化出更多的载流子,因此实现了更大的调制深度。结果表明,在泵浦光波长为 660 nm、功率仅为 117 mW时,该调制器的调制深度达到了63.6%。这种新型二维过渡金属硫化物对太赫兹波的调制有着更高的效率,使其在太赫兹技术中有很好的应用前景。

Controlling the propagation of terahertz(THz)wave is very important in the application of THz technology. THz modulator is considered to be the key device in next-generation THz wireless communication. A new-type opticallypumpedTHz modulator based on Si-grown monolayer tungsten disulfide(WS2)was demonstrated. WS2acts as acatalystdue to the formation ofheterojunction at the junction between Si substrate and WS2,since more carriers are catalyzed at the heterojunction under pumping power,the modulator can achieve more deep modulation depth. The result shows that the modulation depth of this Si-grown monolayerWS2modulator can reach63.6% under the low pumping power of117 mW andthe wavelength ofthe pumplightis 660 nm. This noveltwo-dimensionaltransi-tion metal dichalcogenides with high modulation efficiency have a great prospect in the application of THz technology.动计划(17ZR1448300)