随着显示技术的发展, Ti/Al/Ti材料需求的厚度越来越厚, 布线越来越窄。目前LTPS显示技术中常规的设计为Ti/Al/Ti材料衬底使用无机膜, 后续柔性OLED显示技术新设计中Ti/Al/Ti衬底开始逐渐使用有机膜(聚酰亚胺等), Ti/Al/Ti干法刻蚀工艺面临的挑战越来越大。本文主要研究在常规Ti/Al/Ti干法刻蚀工艺中, BCl3气体对Ti/Al/Ti侧面形态的影响以及对光刻胶刻蚀速率的影响, 实验结果表明: 随着BCl3气体流量的增加, Ti/Al/Ti侧面保护膜的厚度越来越薄, 对PR胶的刻蚀速率越来越小。本文研究结果便于更好地应对后续Ti/Al/Ti干法刻蚀衬底为有机膜的新工艺。

With the development of display technology, the thickness of Ti/Al/Ti materials becomes thicker and the wiring becomes narrower and narrower. At present, the conventional design of LTPS display technology is to use inorganic film on Ti/Al/Ti substrates. In the new design of flexible OLED display technology, Ti/Al/Ti substrates are gradually using organic film. The challenge of Ti/Al/Ti dry etching process is becoming more and more serious. In this paper, the effect of BCl3 gas on the side morphology of Ti/Al/Ti and the etching rate of photo resist in conventional Ti/Al/Ti dry etching process is studied. With the increase of BCl3 gas flow rate, the thickness of Ti/Al/Ti side protective film is thinner and thinner, and the etching rate of photo resist is smaller and smaller. Based on the research and analysis, it is easy to cope with the new process of dry etching Ti/Al/Ti substrates as organic films.