量子电子学报, 2019, 36 (6): 641, 网络出版: 2019-12-06   

边发射半导体激光器光纤耦合技术研究进展

Research progress of fiber coupled technology for side emission semiconductor laser
荆玉峰 1,2,3,4,*郑建刚 1,2,3肖凯博 1,2严雄伟 1,2蒋新颖 1,2
作者单位
1 中国工程物理研究院激光聚变研究中心激光技术工程部, 四川 绵阳 621900
2 中国工程物理研究院高能激光科学与技术重点实验室, 四川 绵阳 621900
3 上海交通大学IFSA协同创新中心, 上海 200240
4 中国工程物理研究院研究生院, 北京 100088
摘要
随着半导体材料生长工艺和封装技术等的快速发展,高功率、 高亮度半导体激光器的性能不断提升,使之在工业加工、生物医疗、**以及作为光纤和固体激光器泵 浦源等方面有着重要作用。近些年来,边发射半导体的功率和光束质量的提升,使得耦合到光纤的输出功 率不断提高。单管光纤耦合逐渐从毫瓦级输出发展到数十瓦输出,通过偏振、光谱、空间等合束技术,甚 至达到数百瓦的输出。在叠阵或多线阵光纤耦合方面,也实现了从数十瓦级输出发展到数十千瓦级输出。 从单管、线阵和叠阵三种半导体激光器出发,对半导体激光器发展现状、技术进行了调研分析,对光纤耦合半 导体激光器的多种整形、合束和耦合技术进行了总结和展望。
Abstract
With the rapid development of semiconductor growth technology and packaging technology, the performance of high power and high brightness semiconductor lasers has been continuously improved, which plays an important role in industrial processing, biomedical, national defense, as well as pumping source of fiber lasers and solid-state lasers. In recent years, the power and beam quality of side-emitting semiconductors have been improved, which makes the output power coupled to optical fibers continuously improve. The output of fiber coupled single emitter has been gradually improved from milliwatt to tens of watts, even hundreds of watts through polarization, spectrum or space combining technology. In the field of stacked array or multi-linear array fiber coupled laser, the output has also been improved from tens of watts level to tens of kilowatts level. Starting from three kinds of semiconductor lasers including single emitter, linear array and stacked array, the development status and technology of semiconductor lasers are investigated and analyzed, and the various shaping, bunching and coupling technology of fiber-coupled semiconductor lasers are also summarized and prospected.

荆玉峰, 郑建刚, 肖凯博, 严雄伟, 蒋新颖. 边发射半导体激光器光纤耦合技术研究进展[J]. 量子电子学报, 2019, 36(6): 641. JING Yufeng, ZHENG Jiangang, XIAO Kaibo, YAN Xiongwei, JIANG Xinying. Research progress of fiber coupled technology for side emission semiconductor laser[J]. Chinese Journal of Quantum Electronics, 2019, 36(6): 641.

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