InAs/GaSb超晶格材料已经成为了第三代红外焦平面探测器的优选材料。开展了InAs/GaSb二类超晶格中/短波双色焦平面探测器器件结构设计、材料外延、芯片制备, 对钝化方法进行了研究, 制备出性能优良的320×256双色焦平面探测器。首先以双色叠层背靠背二极管电压选择结构作为基本结构, 设计了中/短波双色芯片结构, 然后采用分子束外延技术生长出结构完整、表面平整、低缺陷密度的PNP结构超晶格材料。采用硫化与SiO2复合钝化方法, 最终制备的器件在77 K下中波二极管的RA值达到13.6 kΩ·cm2, 短波达到538 kΩ·cm2。光谱响应特性表明短波响应波段为1.7~3 μm, 中波为3~5 μm。双色峰值探测率达到中波3.7×1011 cm·Hz1/2W-1以上, 短波2.2×1011 cm·Hz1/2W-1以上。响应非均匀性中波为9.9%, 短波为9.7%。中波有效像元率为98.46%, 短波为98.06%。

InAs/GaSb superlattice material has become the primary choice for the fabrication of the third-generation infrared detectors． Practical researches on detector design, material epitaxy, chip processing, etc were carried out. 320×256 dual-color focal plane arrays with excellent performance was fabricated. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions with voltage selection structure. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy(MBE). The device was passivated with sulfide treatment and a SiO2 layer. Finally, at 77 K, the RA value of middle-wave channel reached 13.6 kΩ·cm2 and the short-wave channel reached 538 kΩ·cm2. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibited a detectivity value of 3.7×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibited a detectivity value of 2.2×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.