提出一种SOI基的新型隧穿场效应晶体管（TFET）探测器结构，将光电二极管与TFET结合，实现光信号的探测放大.光电二极管的正极与TFET的栅极互连，感光后光电二极管的光生电势调控TFET的沟道势垒，控制TFET的输出电流，实现光信号到电流信号的转化.陡峭的亚阈值摆幅能有效放大输出电流，提高TFET探测器的响应度.应用SILVACO完成探测器结构和性能的模拟仿真.光电二极管的光生电势通过较薄的BOX区形成了TFET的底部栅压，增强了对沟道势垒的控制能力，增大了输出电流，结果表明，探测器对弱光具有较高的响应度，当入射光强小于10 mW/cm²时，响应度可超过10⁴ A/W.此外，通过调整光电二极管的反偏电压、在源区与沟道间插入n⁺口袋等方法可显著提高探测器的输出电流和响应度.

A novel Tunneling Field Effect Transistor (TFET) photodetector based on silicon on insulator is proposed, which combines a photodiode with TFET to realize photodetection and amplication. The anode pole of the photodiode is tied with the gate of TFET. After illumination, the photogenerated potential of the photodiode controls the channel state and drain current of the TFET photodetector, and converts the light into current. The subthreshold region is used to amplifies the drain current, and the responsivity of the detector is improved obviously. Two dimensional numerical simulations were performed in SILVACO. The P region of the photodiode forms the bottom gate of the TFET through the thinner BOX, which enhances the control of the channel and increases the drain current. The results show that the detector has higher responsivity in weak light. When the light intensity is less than 10 mW/cm², the responsivity of TFET photodetector can exceed 10⁴ A/W. In addition, adjusting the photodiode bias and inserting n⁺ pockets between the source and the channel can also improve the drain current and responsivity of photodetector.