太赫兹科学与电子信息学报, 2019, 17 (4): 547, 网络出版: 2020-01-09
双顶栅极石墨烯的太赫兹信号源
Terahertz signal source by double-top-gate graphene
摘要
为探索产生太赫兹信号的新型材料与器件, 提出一种基于石墨烯的具有双顶栅极结构的场效应管器件 (FET)模型, 并对此器件所具有的太赫兹特性进行研究。使用费米函数推导计算发现, 器件在一定的太赫兹频段存在负电导的可能, 同时得到了石墨烯综合电导与偏置电压、弛豫时间、栅极电压以及温度等因素之间的关系, 表明此器件具有作为新型太赫兹源的潜力。
Abstract
In order to explore the new materials and devices that generate terahertz signals, a graphene-based Field Effect Transistor(FET) device model with double-top-gate structure is proposed, and the terahertz characteristics of the device are studied. Using the Fermi function, it is found that the device has the possibility of negative conductivity in a certain terahertz band. The relationships among graphene integrated conductivity and bias voltage, relaxation time, gate voltage and temperature are obtained, which indicate the potential of this device as a new terahertz radiation source.
李文东, 刘景萍, 常梦璐. 双顶栅极石墨烯的太赫兹信号源[J]. 太赫兹科学与电子信息学报, 2019, 17(4): 547. LI Wendong, LIU Jingping, CHANG Menglu. Terahertz signal source by double-top-gate graphene[J]. Journal of terahertz science and electronic information technology, 2019, 17(4): 547.