太赫兹科学与电子信息学报, 2019, 17 (4): 552, 网络出版: 2020-01-09
基于肖特基二极管的 670 GHz四次谐波混频器设计
Design of a 670 GHz fourth harmonic mixer based on Schottky diode
摘要
常温固态太赫兹谐波混频器是太赫兹系统应用中的关键器件。介绍了一款基于肖特基二极管的 670 GHz四次谐波混频器的仿真与设计。在高频结构仿真软件( HFSS)中对准垂直结构肖特基势垒变阻二极管进行三维结构建模, 采用基于谐波平衡算法的整体综合仿真方法对混频器进行仿真和优化。结果表明: 在功率为 10 mW的167 GHz本振信号驱动下, 混频器单边带变频损耗在 637~697 GHz射频频率范围内小于 13.8 dB, 3 dB变频损耗带宽为 60 GHz; 最优单边带变频损耗在 679 GHz为10.6 dB。
Abstract
The solid-state harmonic mixer is vital to terahertz application system, which directly dominate the system performance. Simulation and design of a 670 GHz fourth harmonic mixer are described based on anti-parallel Schottky barrier diode with quasi-vertical structure. We use integrated simulation method based on harmonic balance algorithm to simulate and optimize the mixer, with the basis on the precise three-dimension model of quasi-vertical built in High Frequency Simulation Simulator (HFSS). Simulated result shows that under the Local Oscillator(LO) power of 10 mW in 167 GHz, the single-sideband conversion loss is less than 13.8 dB between 637-697 GHz of RF frequency. The minimum single sideband conversion loss is 10.6 dB at 679 GHz. The 3 dB conversion loss bandwidth is 60 GHz.
纪广玉, 张德海, 孟进. 基于肖特基二极管的 670 GHz四次谐波混频器设计[J]. 太赫兹科学与电子信息学报, 2019, 17(4): 552. JI Guangyu, ZHANG Dehai, MENG Jin. Design of a 670 GHz fourth harmonic mixer based on Schottky diode[J]. Journal of terahertz science and electronic information technology, 2019, 17(4): 552.