为了改善9xx nm高功率半导体激光器的性能, 对n包层和p包层的掺杂分布进行了调整, 以减小激光器的内部损耗。同时为了减小有源区载流子的泄漏, 在有源区和波导层之间引入了高能量带隙GaAsP。设计并制作了内部损耗为1.25 cm-1的高功率激光器。器件可靠性工作的最大输出功率为26.5 W。当输出功率为10.5 W时, 最大电光功率转换效率为72.4%, 斜率效率为1.16 W/A。

To improve the performance of 9xx nm high power semiconductor lasers, the doping profile of n-cladding layer and p-cladding layer is adjusted to reduce the internal loss. A high energy band gap GaAsP was introduced between the active region and the waveguide layer to reduce the leakage of carriers in the active region. A broad area laser with internal loss of 1.25 cm-1 is designed and fabricated. The device with maximum output power of 26.5 W is obtained. The maximum electrical-optical power conversion efficiency is 72.4%, which is obtained when the output power is 10.5 W. The slope efficiency is 1.16 W/A.