研究了InGaN/GaN超晶格准备层的生长温度对Si衬底GaN基黄光LED光电特性和老化性能的影响。研究发现准备层生长温度较高的样品外量子效率高于准备层生长温度较低的样品。500 mA电流下老化1 000 h后, 准备层生长温度较高的样品的光衰相对更大。老化前后100 K的电致发光光谱显示高温生长的样品老化后的空穴注入途径发生变化; 老化后光衰大的样品非辐射复合中心增加的程度更大。荧光显微镜观察到两个样品老化前均出现大量暗斑, 高温样品的颜色更深更黑, 低温样品颜色则相对较浅且呈红色。老化后高温样品的暗斑数量有所增加, 而低温样品数量变化不大, 这可能也是导致超晶格温度高的样品光衰更大的原因之一。

In this paper, we studied the effect of growth temperature on InGaN/GaN superlattice preparation layer of GaN based yellow LED on Si substrate including photoelectric and aging properties. It was found that the external quantum efficiency of the sample with higher growth temperature of the preparation layer was higher than that of the samples with the lower growth temperature. After 1 000 h of aging at 500 mA, the light decay of the samples with higher growth temperature of the preparation layer is relatively larger. The electroluminescent spectra of 100 K before and after aging showed that the hole injection pathway of high-temperature-grown sample changed after aging, and the non-radiative composite center of high-temperature sample increased more after aging. Fluorescence microscope showed that a large number of dark spots appeared before aging, the color of high-temperature sample was darker, and the color of low temperature sample was lighter and red. The number of dark spots of high-temperature sample increased after aging, but the quantity of low temperature sample did change small, which may also be one of the reasons for the higher light decay of samples with high superlattice temperature.