通过水热法制备了Cu-In-Zn-S(CIZS)四元量子点, 采用X射线衍射仪(XRD)、能谱仪(EDS)、透射电子显微镜(TEM)、荧光分光光度计(PL)研究了不同反应 温度和Cu/In摩尔比对CIZS量子点的物相组成、显微形貌以及荧光性能的影响, 同时利用傅里叶变换红外光谱仪(FT-IR)对CIZS量子点的表面性质进行表征。结 果表明, 量子点颗粒在水溶液中呈类球型并且具有良好的分散性, 粒径大小为3~4 nm。合成的CIZS量子点具有优异的荧光性能, 随着反应温度的升高, 量子点 的荧光强度逐渐增强; 当反应温度为110 ℃时, 量子点的荧光强度最高; 然而, 过高的反应温度造成了In2S3杂质相的形成, 荧光强度随之降低。此外, 随着 Cu/In摩尔比的减小, CIZS量子点的发光峰位由675 nm蓝移至644 nm, 同时量子点的荧光强度逐渐提高; 当n(Cu)/n(In)=1∶7时, 荧光强度达到最高值。同时, 量子产率(QYs)达到最大值6.2%。基于CIZS量子点的LED成功实现发光, 其中显色指数达81.2, 发光效率为36.8 lm/W, 表明了CIZS量子点在照明领域良好的应 用前景。

Cu-In-Zn-S (CIZS) quaternary quantum dots (QDs) were prepared by hydrothermal method. The effects at different reaction temperatures and Cu/In molar ratios on phase composition, microscopic morphology, and fluorescence performance of CIZS QDs were studied by X-ray diffraction (XRD), energy spectrometer (EDS), transmission electron microscope (TEM), and fluorescence spectrophotometer (PL). The surface property of CIZS QDs was characterized by Fourier transform infrared spectrometer (FT-IR). The results show that the QDs presented spherical shape with good dispersion in aqueous solution, and the particle sizes were 3-4 nm. Moreover, the prepared CIZS QDs exhibites excellent luminescence property. The emission intensity of CIZS QDs was gradually improved with the increase of reaction temperature, and the QDs exhibited the strongest emission at 110 ℃. However, the impurity of In2S3 phase was formed at excessive temperature, resulting in the decrease of emission intensity. Moreover, the emission peak of CIZS QDs show a blue-shift tendency from 675 nm to 644 nm with the decrease of Cu/In ratios, and the emission intensity gradually enhanced and reached maximum value at n(Cu)/n(In)=1∶7. Meanwhile, the quantum yield peaked at 6.2%. The LED based on CIZS quantum dot has achieved luminescence successfully, CRI values of 81.2 and LE of 36.8 lm/W, which indicated that CIZS QDs have a good application prospect in the field of lighting.