系统研究了Ba2Mg(BO3)2∶Eu3+荧光粉的高温固相法制备工艺条件, 发现在900 ℃下保温3 h制得的样品的发光性能最好。研究了Eu3+掺杂浓度对基质晶 格环境和发光性质的影响, 当Eu3+浓度较低时, 荧光粉在594 nm的发射峰强度最大, 随着Eu3+掺杂浓度的增加, Eu3+偏离对称中心的程度越来越大, 当Eu3+浓 度超过3at%时, 荧光粉在613 nm的发射峰强度开始急剧增强, 浓度达到3.5at%时, 613 nm的发射开始占主导, 这是由于晶体结构的扭曲程度导致晶格对称性发 生了较大的改变, 释放了更多禁戒的5D0→7F2电偶极跃迁。制备的橙色荧光粉可以被近紫外InGaN芯片有效激发, 应用于白光LED。

The preparation conditions of phosphor based on Ba2Mg(BO3)2 host was systematically investigated, effect of Eu3+ content on the host lattice environment and luminescent properties of phosphor as well. The research results show that Ba2+ is increasingly deviate from symmetric center with increase of Eu3+ content. When Eu3+ content is very low, the maximum emission peak of the Ba2Mg(BO3)2∶Eu3+ is at 594 nm. However, Eu3+ content is over 3at%, the emission intensity at 613 nm peak is dramatically enhanced, and is more than that of at the peak of 594 nm in case Eu3+ content is over 3.5at%, which is attributed to the degree of distortion of crystal structure, and result in obvious change of the symmetric properties of the crystal lattice, thus forbidden electric dipolar 5D0→7F2 transition is more released. The prepared orange phosphor can be effectively excited by near ultraviolet InGaN chip and applied to white LED.