半导体激光器(LD)工作在空间辐射或核辐射环境中时, 会受到辐照损伤的影响而导致器件性能退化。文章回顾了不同时期研制的LD(从早期的GaAs LD到量子阱LD和量子点LD)在辐照效应实验方面的研究进展, 梳理了国际上开展不同辐射粒子或射线(质子、中子、电子、伽马射线)诱发LD辐射敏感参数退化的实验规律, 分析总结了当前LD辐照效应实验方法研究中亟待解决的关键技术问题, 为今后深入开展LD的辐照效应实验方法、退化规律、损伤机理及抗辐射加固技术研究提供理论指导和实验技术支持。

Laser diodes (LDs) applied in the space or nuclear radiation environments will be susceptible to the radiation damage, which induces the degradation of the LD performances. In this paper, the radiation experiment progresses of the LDs manufactured at different periods such as the GaAs LDs at forpart, the quantum well LDs, and the quantum dot LDs are reviewed. The degradations of the LD radiation parameters induced by different particles or rays such as protons, neutrons, electrons, and gamma rays are briefly introduced. The key problems needing to be further resolved in the future are analyzed. This paper will provide the basis of the theories and experimental techniques for the investigations of radiation experiment methods, degradation, damage mechanisms, and adiation hardening of the LDs.