传统平面入射型硅基探测器由于近红外吸收系数低, 存在响应速度和探测效率的冲突, 被认为不适用于短距离光纤通信领域。微纳结构可有效提高等效光程, 使入射光被吸收层充分吸收, 提高光电器件的量子效率, 广泛应用于太阳电池、近红外增强探测器等领域。近期, 研究者基于陷光微结构, 实现了数据传输速率达20Gb/s以上、与CMOS工艺兼容的硅基高速探测器, 展现出了广阔的发展前景。文章对微纳结构的优化设计、制备方法、基于微纳结构的硅基高速探测器的研究进展进行了综述和分析。

Due to the low near-infrared absorption coefficient of silicon, there is a conflict between response speed and detection efficiency for conventional surface-illuminated silicon detectors. Thus they are thought to be not suitable for short-range optical fiber communication. Micro-/nanostructures have been widely used in solar cells, near-infrared enhanced detectors and other fields for their abilities to improve the absorption of incident light in absorption layers and the quantum efficiency of optoelectronic devices by multiplying optical path efficiently. Recently, CMOS compatible high-speed silicon detectors with a data transmission rate of higher than 20Gb/s have been achieved by applying photon-trapping microstructure. In this paper, the optimal design and preparation methods of micro-nano structures and high-speed silicon detectors based on micro-nano structure are reviewed and analyzed.