193 nm ArF准分子激光光刻技术作为当前主流的光刻技术,可实现特征尺寸小于等于90 nm的集成电路制作工艺。光场均匀性及脉冲能量的准确性是实现高质量光刻的重要指标,提出了基于暗场噪声相消提高单脉冲能量测量精度的方法,通过对探测头获取的激光脉冲能量数据和暗场下探测头的脉冲能量数据进行暗场相消,获得真实激光能量。设计了暗场噪声相消控制电路,通过同步控制时序,有效去掉能量脉冲积分信号结果中所携带的噪声积分部分,从而实现对脉冲激光能量测量精度的提高。

193 nm ArF excimer laser lithography as the current mainstream lithography technology, which can realize criticall dimension(CD) less than or equal to 90 nm of integrated circuit technology. The optical field uniformity and the accuracy of the pulse energy is the important index to realize high lithographic quality, so a single pulse energy detecting method for ArF excimer laser based on dark field noise cancellation is proposed to improve energy measurement precision. It can measure the real laser energy by subtracting the energy data of laser pulse detector with the energy data of the dark field energy detector. A dark field noise cancellation control circuit is designed. By controlling the time sequence synchronously, the noise integral part of the energy pulse integral signal result is effectively removed, so as to improve the accuracy of pulse laser energy measurement.