太赫兹科学与电子信息学报, 2020, 18 (3): 364, 网络出版: 2020-07-16   

基于 CMOS工艺的太赫兹振荡器

Terahertz oscillator in CMOS
作者单位
江苏大学电气信息工程学院,江苏镇江 212013
摘要
在太赫兹频段,无源器件电容电感的品质因数低、电路的寄生参数以及 MOS管的截止频率影响使太赫兹振荡器电路难以实现高功率输出。提出一种 300 GHz可调谐振荡器,首先,采用改进的交叉耦合双推 (Push- Push)振荡器结构,通过输出功率叠加的方法输出二次谐波 300 GHz信号,增加了振荡器的输出功率并突破了 MOS管截止频率,并通过增加栅极互连电感增加输出功率。其次,太赫兹振荡器摒弃传统片上可变电容调谐的方式,通过调节 MOS管衬底电压改变 MOS管的栅极寄生电容实现频率调谐,避免太赫兹频段引入低 Q值电容,进一步增加了输出功率。提出的太赫兹振荡器采用台积电 40 nm CMOS工艺,基波工作频率为 154.5 GHz,输出二次谐波为309.0 GHz,输出功率可达 -3.0 dBm,相位噪声为 -79.5 dBc/Hz@1 MHz,功耗为 28.6 mW,频率调谐范围为 303.5~315.4 GHz。
Abstract
In the THz frequency band, the low quality factor of passive device capacitance inductance, the influence of parasitic circuit parameters and cut-off frequency of Metal-Oxide- Semiconductor Field-Effect Transistor(MOSFET) make it difficult for THz oscillator circuit to achieve high power output. A 300 GHz tuning oscillator is proposed to achieve high power output. Firstly, the structure of cross coupled Push-Push oscillator is adopted to realize the second harmonic signal output of 300 GHz. Through the method of power synthesis, the proposed oscillator exports the second harmonic 300 GHz signal, which increases the output power of the oscillator and breaks through the cut-off frequency of MOSFET. The gate interconnection inductance is also adopted to increase the output power. Secondly, instead of tuning with a variable capacitor on the chip, the Push-Push oscillator modulates the substrate voltage of MOSFET to adjust the parasitic gate capacitors of MOSFET to achieve frequency tuning, further increasing the output power. The proposed push-push oscillator is fabricated in TSMC 40 nm CMOS process. By extracting the second harmonic signal and using the substrate voltage tuning technology, the proposed coupled Push-Push oscillator has a peak output power of -2.2 dBm at 309.0 GHz and achieves 303.5-315 GHz tuning range. The phase noise of the oscillator is -79.5 dBc/Hz at 1 MHz offset and the power consumption is 28.6 mW.

汪柏康, 徐雷钧, 白雪. 基于 CMOS工艺的太赫兹振荡器[J]. 太赫兹科学与电子信息学报, 2020, 18(3): 364. WANG Baikang, XU Leijun, BAI Xue. Terahertz oscillator in CMOS[J]. Journal of terahertz science and electronic information technology, 2020, 18(3): 364.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!