作为集成电路制备的衬底材料，对硅单晶的均匀性以及微缺陷的尺寸、密度要求极高。传统直拉法生长硅单晶过程中，通过拉速变化控制晶体直径，因此拉速始终处于波动状态。恒定拉速对晶体均匀性及缺陷密度、尺寸的影响研究较少。本研究实现了在35±0.7 mm/h的拉速范围内生长出直径300 mm硅单晶，对晶体片间和片内电阻率分布以及FPD缺陷分布进行了检测，结果显示，在更小拉速波动阶段，晶体的电阻率均匀性得到改善，FPD缺陷密度降低。

As the substrate material for IC fabrication, the uniformity of silicon single crystal and the size and density of micro defects are highly required. In the process of growing silicon single crystal by traditional Czochralski (Cz) method, the crystal diameter is controlled by the growth-rate, so the growth-rate is always in a fluctuating state. The effects of constant growth-rate on crystal uniformity and defect density and size were still rarely studied. In this research, a 300 mm diameter silicon crystal was grown at the rate of 35±0.7 mm/h. The resistivity distribution between wafers and within a wafer, and the distribution of FPD in the wafer were detected, the results show that the resistivity uniformity of the crystals was improved and the density of FPD are reduced at the lower growth-rate fluctuation stage.