人工晶体学报, 2020, 49 (6): 979, 网络出版: 2020-08-07
MPCVD单晶金刚石高速率和高品质生长研究进展
Research Progress on High Rate and High Quality Growth of MPCVD Single Crystal Diamond
摘要
微波等离子体化学气相沉积(MPCVD)技术被认为是制备大尺寸高品质单晶金刚石的理想手段之一。然而其较低的生长速率(～10 μm/h)以及较高的缺陷密度(103~107 cm-2)是阻碍MPCVD单晶金刚石应用的主要因素, 经过国内外研究团队数十年的不懈努力, 在高速率生长和高品质生长两个方面都取得了众多成果。但是除此之外还需解决高速率与高品质生长相统一的问题, 才能实现MPCVD单晶金刚石的高端应用价值。
Abstract
Microwave plasma chemical vapor deposition (MPCVD) is considered to be one of the ideal methods to synthesize large-scale and high-quality single crystal diamond. However, its low growth rate (~10 μm/h) and high defect density (103-107 cm-2) are the main factors hindering the application of MPCVD single crystal diamond. After decades of unremitting efforts of research teams, many achievements have been made in high-speed growth and high-quality growth of MPCVD single crystal diamond. But in addition to this, problem of the unity of high-speed rate and high-quality growth should be solved in order to realize the high-end application value of MPCVD single crystal diamond.
李一村, 郝晓斌, 代兵, 舒国阳, 赵继文, 张森, 刘雪冬, 王伟华, 刘康, 曹文鑫, 杨磊, 朱嘉琦, 韩杰才. MPCVD单晶金刚石高速率和高品质生长研究进展[J]. 人工晶体学报, 2020, 49(6): 979. LI Yicun, HAO Xiaobin, DAI Bing, SHU Guoyang, ZHAO Jiwen, ZHANG Sen, LIU Xuedong, WANG Weihua, LIU Kang, CAO Wenxin, YANG Lei, ZHU Jiaqi, HAN Jiecai. Research Progress on High Rate and High Quality Growth of MPCVD Single Crystal Diamond[J]. Journal of Synthetic Crystals, 2020, 49(6): 979.
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