光子学报, 2020, 49 (8): 0831001, 网络出版: 2020-11-27
Eu3+, Dy3+共注入AlN薄膜结构和发光特性研究 下载: 635次
Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN Films
光电子 氮化铝 应力 阴极荧光 能量传递 Optoe1ectronics Aluminum nitride Europium 铕 Dysprosium 镝 Strain Cathodoluminescence Energy transfer
摘要
采用离子注入方法在氢化物气相外延法生长的AlN薄膜中注入了不同剂量的Dy3+和Eu3+,制备了Dy3+单掺、Dy3+和Eu3+共掺的AlN样品.对于Dy3+单掺杂AlN样品,X射线衍射和拉曼散射实验结果表明随着Dy注入剂量的增加,样品的压应力也增加,形成了比较明显的损伤层;但当注入剂量由5×1014 at/cm2增加至1×1015 at/cm2时,压应力增加不明显,接近于饱和.对于Dy3+和Eu3+共掺的AlN样品,阴极荧光实验表明,AlN中Eu3+和Dy3+之间可能存在能量传递,能量传递途径为在声子辅助下从Dy3+的4F9/2→6H15/2至Eu3+的7F0→5D2的共振能量传递.此外,计算发现改变Dy3+和Eu3+离子的注入剂量比能实现发光色度坐标和色温的有效调控.
Abstract
Dy3+ and Eu3+ ions with different doses were implanted into AlN thin films grown by hydride vapor phase epitaxy method. For Dy doped AlN, results of X-ray diffraction and Raman scattering show that the compressive stress of the sample increases with the increase of Dy3+ dose. When the Dy3+ dose increases from 5×1014 at/cm2 to 1×1015 at/cm2, the compressive stress of samples is close to saturation. For Dy3+ and Eu3+ co-doped AlN, according to the cathodoluminescence spectra, a possible energy transfer process between Dy3+ and Eu3+ is proposed. In addition, through changing the dose ratio of Dy3+ respect to Eu3+ ions, the chromaticity coordinates and color temperatures of Dy3+ and Eu3+ co-doped AlN can be effectively regulated.
马海, 王晓丹, 李祥, 王丹, 毛红敏, 曾雄辉. Eu3+, Dy3+共注入AlN薄膜结构和发光特性研究[J]. 光子学报, 2020, 49(8): 0831001. Hai MA, Xiao-dan WANG, Xiang LI, Dan WANG, Hong-min MAO, Xiong-hui ZENG. Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN Films[J]. ACTA PHOTONICA SINICA, 2020, 49(8): 0831001.