中国激光, 2020, 47 (5): 0500001, 网络出版: 2020-05-12
半导体激光器研究进展 下载: 8263次特邀综述
Development of Semiconductor Lasers
激光器 半导体激光器 边发射激光器 垂直腔面发射激光器 红外激光器 lasers semiconductor laser edge emitting laser vertical cavity surface emitting laser infrared laser
摘要
半导体激光器从诞生至今半个世纪,在理论、实践和应用方面取得了巨大进展,占据了整体激光领域的大部分市场,广泛应用于通信网络、工业加工、医疗美容、激光传感、航空**、安全防护,以及消费电子等领域。本文在回顾国际国内早期半导体激光器发展历程的基础上,重点针对高功率泵浦源领域的GaAs基8xx nm和9xx nm半导体激光器,三维感知领域的905 nm隧道结激光器和940 nm垂直腔面发射激光器,以及光谱分析和红外感测领域的GaSb基红外激光器和InP基量子级联激光器进行了简单总结。内容包括半导体激光器的主要应用场景、所追求的主要目标、近10年国内外发展的最新进展,以及今后可能的发展趋势与方向。
Abstract
Semiconductor laser has been half a century since its birth, tremendous progress has been made in theory, practice, and applications, and the market occupies more than half of the entire laser field. It is widely used in communication networks, industrial processing, medical and beauty, laser sensing, aviation and defense, security protection, and even consumer electronics. On the basis of reviewing the development history of early domestic and international semiconductor lasers, this article mainly focuses on GaAs-based 8xx nm and 9xx nm semiconductor lasers in the field of high-power pump sources, 905 nm tunnel junction lasers and 940 nm vertical cavity surface emitting lasers in the field of three-dimensional sensing, and GaSb-based infrared lasers and InP-based quantum cascade lasers in the field of spectral analysis and infrared sensing, for a brief review. The content includes the main application scenarios, the main goals pursued, the latest developments in the past 10 years at home and abroad, and the possible development trends and directions in the future.
陈良惠, 杨国文, 刘育衔. 半导体激光器研究进展[J]. 中国激光, 2020, 47(5): 0500001. Lianghui Chen, Guowen Yang, Yuxian Liu. Development of Semiconductor Lasers[J]. Chinese Journal of Lasers, 2020, 47(5): 0500001.