中国激光, 2020, 47 (6): 0600002, 网络出版: 2020-06-03
碳化硅陶瓷基复合材料激光刻蚀技术研究进展 下载: 2129次
Research Advancement on Laser Etching Technology of Silicon Carbide Ceramic Matrix Composite
激光光学 激光加工 碳化硅陶瓷基复合材料 作用机理 热致缺陷 超短脉冲激光 laser optics laser processing silicon carbide ceramic matrix composite interaction mechanism thermally induced defect ultrashort pulse laser
摘要
碳化硅陶瓷基复合材料(CMC-SiC)具有密度低、强度高、耐高温、抗腐蚀等优点,在航空航天领域具有广泛的应用潜力。但是CMC-SiC属于具有超高硬度且各向异性的难加工材料,常规加工技术难以胜任这种新型材料的优质高效加工。激光加工凭借加工质量高、非接触加工、输入热量低、适用范围广、易于和数控技术结合实现自动化等优势,有望成为CMC-SiC材质构件精密制造的主流技术。本文从CMC-SiC与激光的相互作用机理出发,分析了激光加工CMC-SiC中出现的典型热致缺陷,阐述了超短脉冲激光在CMC-SiC精密加工中展现的优势。在此基础上,指出了CMC-SiC激光加工技术的发展趋势,旨在为新型航空航天CMC-SiC材质构件的精密制造提供理论依据与技术参考。
Abstract
Silicon carbide ceramic matrix composite (CMC-SiC) has many advantages, such as low density, high strength, high-temperature resistance, and corrosion resistance. It has application prospects in the field of aerospace. However, CMC-SiC is a kind of difficult-to-machine material, with ultra-high hardness and anisotropy. Conventional processing technologies are unsuitable for the high quality and efficient processing of CMC-SiC. Laser processing with high processing quality, non-contact, low heat input, wide range of application, and easy to combine with numerical control technology to achieve automation, has prospects of becoming the mainstream technology for precision processing of CMC-SiC. We analyze the typical thermally induced defects in laser processing based on the interaction mechanism of CMC-SiC with laser. We describe the advantages of ultrashort pulse laser in the CMC-SiC precision processing. In this context, we spotlight the development trend of laser processing technology for CMC-SiC and provide a theoretical basis and technical reference for the precision manufacturing of new aerospace CMC-SiC components parts.
翟兆阳, 梅雪松, 王文君, 崔健磊. 碳化硅陶瓷基复合材料激光刻蚀技术研究进展[J]. 中国激光, 2020, 47(6): 0600002. Zhai Zhaoyang, Mei Xuesong, Wang Wenjun, Cui Jianlei. Research Advancement on Laser Etching Technology of Silicon Carbide Ceramic Matrix Composite[J]. Chinese Journal of Lasers, 2020, 47(6): 0600002.