系统研究了退火温度对硅薄膜结构和光学性能的影响。通过电子束蒸发工艺制备硅薄膜，然后在氮气保护下对薄膜样品在200～500°C范围内进行退火处理。使用XRD、拉曼光谱、电子自旋共振和透射光谱测量等方法对薄膜样品进行了表征。结果显示，随着退火温度的升高，非晶硅薄膜结构有序度在短程和中程范围内得到改善，同时缺陷密度显著降低。当样品在400°C退火后，消光系数k由6.14×10^-3下降到最小值1.02×10^-3 （1000 nm），这是由于此时硅薄膜缺陷密度也降到最低，约为沉积态薄膜的五分之一。试验结果表明，硅薄膜在适当的温度下退火可以有效地降低近红外区膜层的光学吸收，这对硅薄膜在光学薄膜器件研制中具有重要应用。

In this paper, the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N₂ atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffraction （XRD）, Raman spectroscopy, electronic-spin resonance （ESR） and optical transmittance measurement, respectively. With annealing temperature increased, the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6.14×10^-3 to a minimum value of 1.02×10^-3 （at 1000 nm）, which was due to the lowest defect density, about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared region, which were very critical for the application in optical thin film coating devices.