A 4–λ hybrid InGaAsP-Si evanescent laser array is obtained by bonding III–V distributed feedback lasers to a silicon on insulator (SOI) substrate using a selective area metal bonding technique. Multiple wavelengths are realized by varying the width of the III–V ridge waveguide. The threshold current is less than 10?mA for all wavelength channels under continuous-wave (CW) operation at room temperature, and the lowest threshold current density is 0.76??kA/cm2. The side mode suppression ratio (SMSR) is higher than 40?dB for all wavelength channels when the injection current is between 20?mA and 70?mA at room temperature, and the highest SMSR is up to 51?dB. A characteristic temperature of 51?K and thermal impedance of 144°C/W are achieved on average. The 4–λ hybrid InGaAsP-Si evanescent laser array exhibits a low threshold and high SMSR under CW operation at room temperature. The low power consumption of this device makes it very attractive for on-chip optical interconnects.