光学学报, 2020, 40 (21): 2122001, 网络出版: 2020-10-17
基于衍射谱分析的全芯片光源掩模联合优化关键图形筛选 下载: 1463次封面文章
Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization
光学设计 光刻 分辨率增强技术 光源掩模联合优化 图形筛选 optical design lithography resolution enhancement techniques source mask optimization pattern selection
摘要
提出了一种全芯片光源掩模联合优化的关键图形筛选方法,用图形的主要频率表征图形的特征,用主要频率的位置和轮廓信息描述主要频率在频域上的分布特征。设计了相应的主要频率提取方法、覆盖规则、聚类方法以及关键图形筛选方法,实现了全芯片光源掩模联合优化的关键图形筛选。采用荷兰ASML公司的商用计算光刻软件Tachyon进行了仿真验证,与ASML公司同类技术的对比结果表明,本方法获得的工艺窗口优于ASML Tachyon方法。
Abstract
In this paper, a critical pattern selection method for full-chip source mask optimization is proposed. The critical frequency of the pattern represents the characteristics of the pattern. The location and contour information of critical frequency are used to describe the distribution characteristics of the critical frequency in the frequency domain. The corresponding critical frequency extraction method, covering rules, grouping method, and critical pattern selection method are designed to realize the critical pattern selection of the full-chip source mask optimization. Commercial computational lithography software Tachyon of ASML company is used for simulation verification. The comparison with the similar technique of ASML company shows that the process window obtained by this method is better than the ASML Tachyon method.
廖陆峰, 李思坤, 王向朝, 张利斌, 张双, 高澎铮, 韦亚一, 施伟杰. 基于衍射谱分析的全芯片光源掩模联合优化关键图形筛选[J]. 光学学报, 2020, 40(21): 2122001. Lufeng Liao, Sikun Li, Xiangzhao Wang, Libin Zhang, Shuang Zhang, Pengzheng Gao, Yayi Wei, Weijie Shi. Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization[J]. Acta Optica Sinica, 2020, 40(21): 2122001.