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Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array

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Abstract

The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated by the nanosphere lithography and dry-etching technique. Nanorod DUV LED devices with good electrical properties are successfully realized. Compared to planar DUV LEDs, nanorod DUV LEDs present >2.5 times improvement in light output power and external quantum efficiency. The internal quantum efficiency of nanorod LEDs increases by 1.2 times due to the transformation of carriers from the exciton to the free electron–hole, possibly driven by the interface state effect of the nanorod sidewall surface. In addition, the nanorod array significantly facilitates photons escaping from the interior of LEDs along the vertical direction, contributing to improving light extraction efficiency. The three-dimensional finite-different time-domain simulation is performed to further analyze in detail the TE- and TM-polarized photons extraction mechanisms of the nanostructure. Our results demonstrate the nanorod structure is a good candidate for high-efficiency DUV emitters.

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DOI:10.1364/PRJ.7.000B66

所属栏目:Semiconductor UV Photonics

基金项目:National Key R&D Program of China; National Natural Science Foundation of China; Beijing Nova Program10.13039/501100005090; Youth Innovation Promotion Association of the Chinese Academy of Sciences10.13039/501100004739;

收稿日期:2019-01-28

录用日期:2019-07-06

网络出版日期:2019-08-14

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Liang Zhang:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yanan Guo:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Beijing 100083, China
Jianchang Yan:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Beijing 100083, Chinae-mail: yanjc@semi.ac.cn
Qingqing Wu:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yi Lu:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhuohui Wu:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Wen Gu:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Xuecheng Wei:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Beijing 100083, China
Junxi Wang:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Beijing 100083, Chinae-mail: jxwang@semi.ac.cn
Jinmin Li:Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, ChinaState Key Laboratory of Solid-State Lighting, Beijing 100083, China

联系人作者:Jianchang Yan(yanjc@semi.ac.cn); Junxi Wang( jxwang@semi.ac.cn);

备注:National Key R&D Program of China; National Natural Science Foundation of China; Beijing Nova Program10.13039/501100005090; Youth Innovation Promotion Association of the Chinese Academy of Sciences10.13039/501100004739;

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引用该论文

Liang Zhang, Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang, and Jinmin Li, "Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array," Photonics Research 7(9), B66 (2019)

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