Photonics Research, 2020, 8 (8): 08001368, Published Online: Jul. 24, 2020  

High-responsivity, self-driven photodetectors based on monolayer WS2/GaAs heterojunction Download: 603次

Author Affiliations
1 School of Electronic and Information Engineering (Department of Physics), Qilu University of Technology (Shandong Academy of Sciences),Jinan 250353, China
2 Institute of Electronic and Electrical, Changzhou College of Information Technology, Changzhou 213164, China
3 e-mail: likuilong123@126.com
4 e-mail: wangwenjia87@sina.com
Abstract
Constructing two-dimensional (2D) layered materials with traditional three-dimensional (3D) semiconductors into complex heterostructures has opened a new platform for the development of optoelectronic devices. Herein, large-area high performance self-driven photodetectors based on monolayer WS2/GaAs heterostructures were successfully fabricated with a wide response spectrum band ranging from the ultraviolet to near-infrared region. The detector exhibits an overall high performance, including high photoresponsivity of 65.58 A/W at 365 nm and 28.50 A/W at 880 nm, low noise equivalent power of 1.97×10?15 W/Hz1/2, high detectivity of 4.47×1012 Jones, and fast response speed of 30/10 ms. This work suggests that the WS2/GaAs heterostructure is promising in future novel optoelectronic device applications, and also provides a low-cost, easy-to-process method for the preparation of 2D/3D heterojunction-based devices.

Kuilong Li, Wenjia Wang, Jianfei Li, Wenxin Jiang, Min Feng, Yang He. High-responsivity, self-driven photodetectors based on monolayer WS2/GaAs heterojunction[J]. Photonics Research, 2020, 8(8): 08001368.

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