Photonics Research, 2020, 8 (8): 08001368, Published Online: Jul. 24, 2020
High-responsivity, self-driven photodetectors based on monolayer WS2/GaAs heterojunction Download: 603次
Abstract
Constructing two-dimensional (2D) layered materials with traditional three-dimensional (3D) semiconductors into complex heterostructures has opened a new platform for the development of optoelectronic devices. Herein, large-area high performance self-driven photodetectors based on monolayer heterostructures were successfully fabricated with a wide response spectrum band ranging from the ultraviolet to near-infrared region. The detector exhibits an overall high performance, including high photoresponsivity of 65.58 A/W at 365 nm and 28.50 A/W at 880 nm, low noise equivalent power of , high detectivity of , and fast response speed of 30/10 ms. This work suggests that the heterostructure is promising in future novel optoelectronic device applications, and also provides a low-cost, easy-to-process method for the preparation of 2D/3D heterojunction-based devices.
Kuilong Li, Wenjia Wang, Jianfei Li, Wenxin Jiang, Min Feng, Yang He. High-responsivity, self-driven photodetectors based on monolayer WS2/GaAs heterojunction[J]. Photonics Research, 2020, 8(8): 08001368.