提出了一种工作在110 GHz 的耦合腔垂直传输结构。在垂直金属腔的两端对称地装配两个模式变换单元，作为波导的两个激励端口。模式变换单元在50 μm 厚度石英基片上实现，该基片采用通孔结构和双面镀金工艺。因此，该垂直传输结构在太赫兹频段具有较低的插入损耗。仿真结果与测试结果拟合良好，模式变换单元的 S21 仿真结果为-0.7 dB，测试结果小于-1.3 dB，在105~116 GHz 带宽的反射系数低于-10 dB。

The paper proposed a cavity-coupled vertical transition structure working at 110 GHz. Two modetransition units were fabricated at ends of a vertical metal cavity symmetrically, acting as two excitation ports of a waveguide. The proposed mode-transition unit was realized on a 50-μm thick quartz-substrate with via holes and double-side patterned. In this way, the vertical transition structure presented a low insertion loss at terahertz frequency. Good agreement between simulated and measured results was obtained. The simulated S21 of the mode-transition unit was ?0.7 dB, the measured S21 was less than ?1.3 dB. The bandwidth from 105 GHz to 116 GHz was obtained for reflection level lower than ?10 dB.