光子学报, 2020, 49 (1): 0123002, 网络出版: 2020-03-19   

CsPbBrI2量子点制备及其光探测器性能 下载: 589次

Fabrication of CsPbBrI2 Quantum Dots and Its Photodetector Performance
作者单位
运城学院 物理与电子工程系, 山西 运城 044000
摘要
采用热注入法制备空气稳定性良好的CsPbBrI2量子点,以375 nm的脉冲激光作为激发光源研究其光致发光性能.通过旋涂的方式制备相应薄膜,将其作为光敏层应用到光探测器,并对器件的光电子性能和稳定性进行详细研究.结果表明:CsPbBrI2量子点在635 nm附近有强烈的荧光效应,光谱发光峰较窄,半峰宽约为35 nm.CsPbBrI2量子点禁带宽度为1.90 eV,制备的探测器光检测带宽从紫外光260 nm到红光650 nm,光响应度为0.26 A/W,高开/关比高达104,上升/衰减时间为3.5 ms/3.5 ms.在25℃,湿度在25%~35%大气环境下存储60天,性能与初始值相比几乎没有变化.CsPbBrI2量子点具有优异的稳定性、可制备高性能的宽带光检测和易于制造等优点,具备一定的应用前景.
Abstract
CsPbBrI2 Quantum Dots (QDs) with good air stability were prepared by hot injection method. The photoluminescence performance of QDs was studied using 375 nm pulsed laser as excitation source. Photodetectors (PD) based on air-stable CsPbBrI2 QDs were designed and fabricated using a facial spin-coating method. The optoelectronic properties and stability of the devices were also studied in detail.The results show that the quantum dots have strong fluorescence effect near 635 nm, the spectral luminescence peak is relatively narrow, and the half-peak width is about 35 nm. The band gap of CsPbBrI2 quantum dots is 1.90 eV. As a result, the PDs are capable of broad bandwidth photodetection from deep UV 260 nm to visible 650 nm region with good photoresponsivity of 0.26 A/W, high on/off ratio up to 104 and very short rise/decay time of 3.5 ms/3.5 ms. Furthermore, the device performance shows very little degradation at 25%~35% humidity and 25℃ over the course of 60 days of storages in ambient condition. The combination of high performance broad bandwidth photodetection, remarkable stability and easy fabrication categorizes the CsPbBrI2 QDs as a kind of very promising semiconducting materials for optoelectronic applications.

张喜生, 晏春愉, 吴体辉, 李霖峰, 郭俊华, 姚陈忠. CsPbBrI2量子点制备及其光探测器性能[J]. 光子学报, 2020, 49(1): 0123002. Xi-sheng ZHANG, Chun-yu YAN, Ti-hui WU, Lin-feng LI, Jun-hua GUO, Chen-zhong YAO. Fabrication of CsPbBrI2 Quantum Dots and Its Photodetector Performance[J]. ACTA PHOTONICA SINICA, 2020, 49(1): 0123002.

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