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Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

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Abstract

The electrical and structural properties of V/Al-based n-contacts on nAlxGa1?xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×10?4 Ω·cm2 whereas for higher Al mole fraction the IV characteristics are rectifying. Transmission electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal annealing. Compositional analysis confirmed an Al enrichment at the interface. The interfacial nitride-based layer in n-contacts on nAl0.9Ga0.1N is partly amorphous and heavily contaminated by oxygen. The role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are discussed. Finally, ultraviolet C (UVC) LEDs grown on nAl0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120 μW at 20 mA in cw operation.

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DOI:10.1364/PRJ.391075

所属栏目:Optical and Photonic Materials

基金项目:Bundesministerium für Bildung und Forschung10.13039/501100002347; Deutsche Forschungsgemeinschaft10.13039/501100001659;

收稿日期:2020-02-21

录用日期:2020-06-18

网络出版日期:2020-06-18

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Luca Sulmoni:Institut für Festk?rperphysik, Technische Universit?t Berlin, 10623 Berlin, Germany
Frank Mehnke:Institut für Festk?rperphysik, Technische Universit?t Berlin, 10623 Berlin, Germany
Anna Mogilatenko:Ferdinand-Braun-Institut, Leibniz-Institut für H?chstfrequenztechnik, 12489 Berlin, Germany;Institut für Physik, Humboldt Universit?t zu Berlin, 12489 Berlin, Germany
Martin Guttmann:Institut für Festk?rperphysik, Technische Universit?t Berlin, 10623 Berlin, Germany
Tim Wernicke:Institut für Festk?rperphysik, Technische Universit?t Berlin, 10623 Berlin, Germany
Michael Kneissl:Institut für Festk?rperphysik, Technische Universit?t Berlin, 10623 Berlin, Germany;Ferdinand-Braun-Institut, Leibniz-Institut für H?chstfrequenztechnik, 12489 Berlin, Germany

联系人作者:Luca Sulmoni(sulmoni@tu-berlin.de)

备注:Bundesministerium für Bildung und Forschung10.13039/501100002347; Deutsche Forschungsgemeinschaft10.13039/501100001659;

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引用该论文

Luca Sulmoni, Frank Mehnke, Anna Mogilatenko, Martin Guttmann, Tim Wernicke, and Michael Kneissl, "Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers," Photonics Research 8(8), 1381-1387 (2020)

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