中国光学, 2020, 13 (4): 713, 网络出版: 2020-08-17   

EBCMOS近贴聚焦结构及电场分布对电子运动轨迹的影响 下载: 730次

Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS
王巍 1,2李野 1,*陈卫军 1宋德 1,*王新 1
作者单位
1 长春理工大学 理学院,吉林 长春 130022
2 长春工业大学 发展规划与政策法规处,吉林 长春 130012
摘要
为获得高分辨率的电子轰击型CMOS (EBCMOS)成像器件,本文就近贴聚焦结构内电场分布对电子运动轨迹的影响进行了研究。设计了不同的EBCMOS结构并得到3种电场分布情况,分别为光电阴极和背面轰击型CMOS (BSB-CMOS)之间的等势面不平行、部分平行和彼此平行。根据电磁学理论结合蒙特卡洛模拟方法,分别模拟了每种电场分布情况下的电子运动轨迹。研究结果表明:当设计的电子倍增层表面覆盖一层30 nm的超薄重掺杂层,保持极间电压为4000 V且极间距为1 mm时,光生电子轰击BSB-CMOS表面时扩散直径可减小至30 μm。此结构具有电子聚焦作用,有助于实现高分辨率的EBCMOS。同时,进一步研究了光电阴极与BSB-CMOS之间的距离和电压对电子扩散直径的影响。研究发现,近贴间距越小、加速电压越高,相应的电场强度就越高,越有利于电子聚焦。本文工作将为改进电子轰击型CMOS成像器件的分辨率特性提供理论指导。
Abstract
In order to obtain high-resolution Electron Bombarded CMOS (EBCMOS) imaging devices, we study the effect of electric field distribution on the electron trajectory in proximity focusing EBCMOS devices. Three different electric field distributions are obtained by designing different EBCOMS structure, namely, the nonparallel, partially parallel, and parallel equipotential surfaces between the photocathode and the Back-side Bombarded CMOS (BSB-CMOS). The electron trajectories in each case are simulated according to electromagnetism theory and monte carlo simulation method. The results indicate that, when the BSB-CMOS is bombarded by photoelectrons, the scattering diameter can be reduced to 30 μm under the condition that the surface of the electron multiplying layer is covered with 30 nm ultra-thin heavily doping layer and the voltage between electrodes is maintained at 4000 V while the distance between photocathode and BSB-CMOS is 1 mm. This structure is helpful to realize electrons focusing and achieve EBCMOS with high resolution. Then, the influence of the distance and voltage between the photocathode and BSB-CMOS on scattering diameter is studied. The results indicate that the electric field strength increases with the decrease of proximity distance and the increase of the acceleration voltage. This work will provide theoretical guidance for improving the resolution characteristics of EBCMOS imaging devices.

王巍, 李野, 陈卫军, 宋德, 王新. EBCMOS近贴聚焦结构及电场分布对电子运动轨迹的影响[J]. 中国光学, 2020, 13(4): 713. Wei WANG, Ye LI, Wei-jun CHEN, De SONG, Xin WANG. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713.

本文已被 3 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!