光学学报, 2020, 40 (9): 0931001, 网络出版: 2020-05-06   

121.6 nm远紫外高反射薄膜研究 下载: 1249次

Study on High Reflective Film in 121.6 nm Far Ultraviolet
作者单位
1 同济大学物理科学与工程学院精密光学工程研究所, 上海 200092
2 同济大学先进微结构材料教育部重点实验室, 上海 200092
摘要
远紫外波段高反射薄膜的研究具有重要应用价值。为了实现高反射率,采用高温三步蒸发法沉积MgF2膜以保护Al膜,制备了远紫外宽带高反射薄膜,并对样品进行退火处理。结果显示,改进制备工艺和退火工艺后,紫外宽带高反射薄膜在121.6 nm处的反射率高达90%,接近理论设计值。同时分析了散射损耗的影响。采用优化的LaF3/MgF2膜系结构,制备了窄带反射滤光薄膜,其在中心波长122.5 nm处的峰值反射率为75%且半峰全宽为8 nm,达到了理论设计的预期效果,但退火处理损伤了薄膜表面,散射损耗增加,薄膜反射率下降。
Abstract
There are important practical applications of high reflective films in the far-ultraviolet band. In order to obtain high reflectance, the far-ultraviolet broadband high reflective films are prepared by depositing an Al films protected by MgF2 films with the high temperature three-step evaporation method, and these samples are annealed. The results show that the far-ultraviolet broadband high reflective films after improved preparation and annealing can possess a reflectance as high as 90% at 121.6 nm, close to the theoretical design value, and meanwhile, the effect of scattering loss is also analyzed. The narrowband reflective filter films are prepared based on the optimized LaF3/MgF2 film structure. The peak reflectance at central wavelength of 122.5 nm is 75% and the full width half maximum is 8 nm, which indicating the expected effect of the theoretical design has been obtained. However, the annealing process damages the film surface to induce the increase of scattering loss and the decrease of film reflectance.

王金艳, 张锦龙, 焦宏飞, 程鑫彬. 121.6 nm远紫外高反射薄膜研究[J]. 光学学报, 2020, 40(9): 0931001. Jinyan Wang, Jinlong Zhang, Hongfei Jiao, Xinbin Cheng. Study on High Reflective Film in 121.6 nm Far Ultraviolet[J]. Acta Optica Sinica, 2020, 40(9): 0931001.

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