红外与毫米波学报, 2020, 39 (1): 56, 网络出版: 2020-03-12  

基于65 nm标准CMOS工艺的3.0 THz 探测器

A 3.0 THz detector in 65 nm standard CMOS process
方桐 1,3刘力源 1,3,*刘朝阳 1,3冯鹏 1,3李媛媛 2,3刘俊岐 2,3刘剑 1,3吴南健 1,3
作者单位
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083, China
2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China
摘要
基于Dyakonov和Shur等离子体波振荡原理设计并流片制备了一种采用65 nm 标准CMOS工艺的3.0 THz探测器,探测器包括贴片天线、NMOS场效应晶体管、匹配网络及陷波滤波器。探测器在室温条件下可达到526 V/W的响应率(Rv)和73 pW/Hz1/2的噪声等效功率(NEP)。采用该探测器和步进电机搭建了太赫兹扫描成像系统,获得了太赫兹源出射光斑的远场形状,光斑的半高宽(FWHM)为240 μm;并对聚甲醛牙签和树叶进行了扫描成像实验,结果表明CMOS太赫兹探测器在成像领域有潜在的应用前景。
Abstract
A 3.0 THz detector based on plasma-wave theory proposed by Dyakonov and Shur was designed and fabricated in 65 nm standard CMOS process, the detector consists of a patch antenna, a NMOS field effect transistor, a matching network, and a notch filter. The detector can achieve a room-temperature responsivity (Rv) of 526 V/W and a noise equivalent power (NEP) of 73 pW/Hz1/2. The terahertz scanning imaging system was built with the detector and stepper motor, and the far-field shape of the terahertz source beam was obtained, the full width at half maximum (FWHM) of the beam is 240 μm; and the image of the polyformaldehyde toothpick and tree leaf were obtained through the scanning imaging system, it shows that CMOS terahertz detectors have potential applications in the imaging field.

方桐, 刘力源, 刘朝阳, 冯鹏, 李媛媛, 刘俊岐, 刘剑, 吴南健. 基于65 nm标准CMOS工艺的3.0 THz 探测器[J]. 红外与毫米波学报, 2020, 39(1): 56. Tong FANG, Li-Yuan LIU, Zhao-Yang LIU, Peng FENG, Yuan-Yuan LI, Jun-Qi LIU, Jian LIU, Nan-Jian WU. A 3.0 THz detector in 65 nm standard CMOS process[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 56.

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