半导体光刻技术带动着光源逐步向短波辐射方向发展,以KrF-248 nm、ArF-193 nm光源为代表的准分子激光光刻光源逐步取代了以往基于汞灯的光刻光源,成为当前半导体光刻技术发展的主流光源。目前应用于光刻光源的光学元件主要以在深紫外波段具有优异传输特性的氟化钙(CaF2)材料为主。针对光源研发过程中涉及的光学元件与激光相互作用时会发生损伤的问题,从CaF2材料自身的物化特性、激光辐射特性以及激光与材料相互作用产生损伤的机理三个方面,综合分析了CaF2材料抗紫外激光研究的发展情况,比较了不同应用背景下CaF2材料的激光损伤特性,总结归纳了提高光学元件激光损伤阈值的措施和方法。

The development of semiconductor lithography technology requires light sources with short wavelengths. Excimer laser-based lithography light sources (i.e., KrF-248 nm and ArF-193 nm) are gradually replacing the previously used light sources based on a Hg lamp, which are the commonly used light sources in current semiconductor lithography technology. The optical components that are currently employed in lithographic light sources primarily use calcium fluoride (CaF₂) materials, which have excellent transmission characteristics in the deep ultraviolet region. In this study, the damage characteristics of the laser-material interaction in the development of the light source are analyzed. The development of the research on ultraviolet resistance of CaF₂ materials is comprehensively analyzed by investigating the physicochemical properties of CaF₂ materials, characteristics of laser radiation, and damage mechanism of the laser-material interaction. The laser damage characteristics of CaF₂ materials for different applications are compared. The approaches and methods to improve the damage thresholds of optical components are summarized.