高功率800 nm波段半导体激光器是远距离照明的优选光源之一,但受光束质量及亮度限制,难以远距离传输,提升高功率800 nm半导体激光器的光束质量及亮度是关键。光谱合束方法在保持激光单元的光束质量时,提高了激光功率和亮度。基于光谱合束方法,结合芯片增益光谱来优化合束谱宽和结构,耦合10个800 nm激光线阵,研制出连续功率为363.5 W,光束质量为4.17 mm·mrad,亮度为212 MW/(cm 2·sr)的激光源,电光转换效率为40%。通过进一步结构优化及偏振合束,有望获得千瓦级的高功率800 nm半导体激光,为远距离激光照明提供高性能光源。

High-power semiconductor lasers operating at a wavelength of 800 nm are one of the preferred laser sources for long-distance illumination. However, owing to poor beam quality and brightness, it is difficult for 800-nm semiconductor lasers to transmit over long distances. Therefore, it is essential to improve the beam quality and brightness. For spectral beam combining method, the output power and brightness are improved while preserving the beam quality of a laser unit. Based on this method, a high-power laser source comprising 10 800-nm laser arrays is developed by optimizing the spectral width and the combining structure according to the gain spectra of laser bars, with a continuous power of 363.5 W, beam quality of 4.17 mm·mrad, brightness of 212 MW/(cm 2·sr), and electro-optic conversion efficiency of 40%. Through further structural optimization and polarization coupling, a kW-class high-power 800-nm semiconductor laser can be obtained, providing a high-performance laser source for long-distance laser illumination.