为了更好地解决用旋光晶体制作电光Q开关中的问题,需要从理论上对光的传播方程进行研究。通过对硅酸镓镧旋光晶体中电光效应和旋光效应对光的偏振态影响的研究,推导出了处于外加电场中的旋光晶体中光的传播方程的表达式,以及透过光强的表达式,并利用几种简单的光学器件在实验上得到了很好的验证。利用光的传播方程和实验的结果,推算出硅酸镓镧晶体电光系数γ11=2.1×10-12 m/V,与以前测量的结果吻合得很好;找到了利用旋光晶体制作电光开关应该满足的条件,给出了一种制作方法,在实验上得到了很好的实现,从而证实了旋光晶体作为电光开关材料的可行性。

For the better achievement of electro-optical (E-O)Q-switch in optically active crystal, the propagation of the light in the optically active crystal with applied electric field was studied in the theory. The influences of electro-optical and optically active effects of the La3Ga5SiO14 (LGS) crystal on the arbitrary linearly polarized light propagating along the optical axis were studied, the equation of the propagation of light and the expression of the light intensity were deduced. Then experiment setup with several simple optical devices was designed for testifying the equation and demonstrated its validation. The LGS electro-optical coefficient γ11=2.1×10-12 m/V was deduced by the experiment and coincided with the former measured result very well. The availability of the optically active crystal as an electro-optical device was demonstrated both in the theory and experiment.